Datasheet HMC717ALP3E (Analog Devices) - 9

HMC717ALP3E
v09.0816
Gaas pHEMT MMIC LOW NOIsE aMpLIFIER, 4.8 - 6.0 GHz THEORY OF OpERaTION
The HMC717A is a gal ium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic T (pHEMT), low noise amplifier. The HMC717A amplifier uses two gain stages in series, the basic schematic M for the amplifier is shown in Figure 3, which forms a low noise amplifier operating from 4.8 GHz to 6 GHz with excel ent noise figure performance. E - S IS O W N O R - L IE LIF P M
Basic Schematic for HMC717A
A The HMC717A has single-ended input and output ports whose impedances are nominal y equal to 50 Ω over the 4.8 GHz to 6 GHz frequency range. Consequently, it can directly insert into a 50 Ω system with no required impedance matching circuitry, which also means that multiple HMC717A amplifiers can be cascaded back to back without the need for external matching circuitry. The input and output impedances are sufficiently stable vs. variations in temperature and supply voltage that no impedance matching compensation is required. Note that it is critical to supply very low inductance ground connections to the backside exposed paddle to ensure stable operation. To achieve optimal performance from the HMC717A and prevent damage to the device, the absolute maximum ratings should not be exceeded.
appLICaTIONs INFORMaTION
The figure above shows the basic connections for operating the HMC717A. AC couple the input with 1.2 pF capacitor. The RF output of the HMC717A has on chip DC block capacitor which eliminates the need for external AC coupling capacitor. Use the appropriate Rbias resistor values, given in the Absolute Bias Resistor Range & Recommended Bias Resistor Values table on page 6. The bias conditions previously listed (VDD = 5 V, Rbias = 825Ω and VDD = 3 V, Rbias = 5.76kΩ) are the recommended operating points to achieve optimum performance. The data used in this data sheet was taken with the recommended bias conditions. When using the HMC717A with different bias conditions, different performance than what is shown in the Typical Perfor- mance Characteristics section may result. Increasing the Vdd level and changing the Rbias resistor to the recommended value, typical y improves gain, IP3 and noise figure at the expense of power consumption. This behavior can be seen on Typical Performance Characteristics plots. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
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Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Gain, Noise Figure & Rbias @ 5900 MHz Output IP3 vs. Rbias @ 5900 MHz Gain, Noise Figure & Rbias @ 4800 MHz Output IP3 vs. Rbias @ 4800 MHz Gain, Power & Noise Figure vs. Supply Voltage @ 5900 MHz Gain, Power & Noise Figure vs. Supply Voltage @ 4800 MHz Power Compression @ 5900 MHz Power Compression @ 5900 MHz Power Compression @ 4800 MHz Output IP3 and Total Supply Current vs. Supply Voltage @ 5900 MHz Output IP3 and Total Supply Current vs. Supply Voltage @ 4800 MHz Output IP3 vs. Temperature Psat vs. Temperature P1dB vs. Temperature Noise Figure vs. Temperature Reverse Isolation vs. Temperature Output Return Loss vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Gain vs. Temperature Broadband Gain & Return Loss Power Compression @ 4800 MHz Absolute Bias Resistor Range & Recommended Bias Resistor Values Absolute Maximum Ratings Typical Supply Current vs. Supply Voltage Outline Drawing Package Information Pin Descriptions Application Circuit Evaluation PCB List of Materials