Datasheet HMC903 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | 6 GHz to 18 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier |
| Pages / Page | 13 / 1 — 6 GHz to 18 GHz GaAs, pHEMT, MMIC,. Low Noise Amplifier. Data Sheet. … |
| Revision | C |
| File Format / Size | PDF / 212 Kb |
| Document Language | English |
6 GHz to 18 GHz GaAs, pHEMT, MMIC,. Low Noise Amplifier. Data Sheet. HMC903. FEATURES. GENERAL DESCRIPTION
Model Line for this Datasheet
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6 GHz to 18 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier Data Sheet HMC903 FEATURES GENERAL DESCRIPTION Noise figure: 1.6 dB typical
The HMC903 is a gallium arsenide (GaAs), pseudomorphic high
Small signal gain: 19 dB typical
electron mobility transistor (pHEMT), monolithic microwave
Output P1dB: 16 dBm typical
integrated circuit (MMIC), low noise amplifier (LNA), which is
Single-supply voltage: 3.5 V at 90 mA typical
self biased with the optional bias control for IDQ reduction. The
Output IP3: 27 dBm typical
device operates between 6 GHz and 18 GHz. This LNA provides
50 Ω matched input/output
19 dB of small signal gain, 1.6 dB noise figure, and an output
Self biased with optional bias control for quiescent drain
third-order intercept (IP3) of 27 dBm, requiring only 90 mA of
control (IDQ) reduction with no radio frequency (RF) applied
supply current from a 3.5 V supply. The output power for a 1 dB
Die size: 1.33 mm × 1.08 mm × 0.102 mm
compression (P1dB) of 16 dBm enables the LNA to function as
APPLICATIONS
a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. The HMC903 also features inputs/outputs that are dc
Point to point radios
blocked and internal y matched to 50 Ω for ease of integration
Point to multipoint radios
into multichip modules (MCMs). All data is taken with the
Military and space
HMC903 in a 50 Ω test fixture connected via 0.025 mm (1 mil)
Test instrumentation
diameter with bonds of 0.31 mm (12 mil) length.
FUNCTIONAL BLOCK DIAGRAM HMC903 2 3 VDD1 VDD2 RFIN 1 4 RFOUT V V GG1 GG2 6 5
001 14481- Figure 1.
Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUITS ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE
The HMC903 is a gallium arsenide (GaAs), pseudomorphic high
Small signal gain: 19 dB typical
electron mobility transistor (pHEMT), monolithic microwave
Output P1dB: 16 dBm typical
integrated circuit (MMIC), low noise amplifier (LNA), which is
Single-supply voltage: 3.5 V at 90 mA typical
self biased with the optional bias control for IDQ reduction. The
Output IP3: 27 dBm typical
device operates between 6 GHz and 18 GHz. This LNA provides
50 Ω matched input/output
19 dB of small signal gain, 1.6 dB noise figure, and an output
Self biased with optional bias control for quiescent drain
third-order intercept (IP3) of 27 dBm, requiring only 90 mA of
control (IDQ) reduction with no radio frequency (RF) applied
supply current from a 3.5 V supply. The output power for a 1 dB
Die size: 1.33 mm × 1.08 mm × 0.102 mm
compression (P1dB) of 16 dBm enables the LNA to function as
APPLICATIONS
a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. The HMC903 also features inputs/outputs that are dc
Point to point radios
blocked and internal y matched to 50 Ω for ease of integration
Point to multipoint radios
into multichip modules (MCMs). All data is taken with the
Military and space
HMC903 in a 50 Ω test fixture connected via 0.025 mm (1 mil)
Test instrumentation
diameter with bonds of 0.31 mm (12 mil) length.
FUNCTIONAL BLOCK DIAGRAM HMC903 2 3 VDD1 VDD2 RFIN 1 4 RFOUT V V GG1 GG2 6 5
001 14481- Figure 1.
Rev. C Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUITS ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE
