Datasheet HMC-ALH102 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz |
| Pages / Page | 6 / 3 — HMC-ALH102. GaAs HEMT MMIC WIDEBAND. LOW NOISE AMPLIFIER, 2 - 20 GHz. … |
| File Format / Size | PDF / 464 Kb |
| Document Language | English |
HMC-ALH102. GaAs HEMT MMIC WIDEBAND. LOW NOISE AMPLIFIER, 2 - 20 GHz. Absolute Maximum Ratings. Outline Drawing
Model Line for this Datasheet
Text Version of Document
HMC-ALH102
v03.0118
GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Absolute Maximum Ratings
Drain Bias Voltage +3.7 Vdc Gate Bias Voltage -1 to +0.3 Vdc RF Input Power 5 dBm ELECTROSTATIC SENSITIVE DEVICE IP Channel Temperature 180 °C OBSERVE HANDLING PRECAUTIONS H Continuous Pdiss (T = 85 °C) 0.94 W (derate 9.87 mW/°C above 85 °C) C Thermal Resistance - 101.4 °C/W (channel to die bottom) S Storage Temperature -65 to +150 °C R Operating Temperature -55 to +85 °C IE LIF
Outline Drawing
P M A E IS O N W LO NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. Standard Alternate 3. BACKSIDE METALLIZATION: GOLD. GP-2 (Gel Pack) [2] 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. [1] Refer to the “Packaging Information” section for die 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. 7. OVERALL DIE SIZE ±.002” [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
3
Application Support: Phone: 1-800-ANALOG-D
v03.0118
GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz Absolute Maximum Ratings
Drain Bias Voltage +3.7 Vdc Gate Bias Voltage -1 to +0.3 Vdc RF Input Power 5 dBm ELECTROSTATIC SENSITIVE DEVICE IP Channel Temperature 180 °C OBSERVE HANDLING PRECAUTIONS H Continuous Pdiss (T = 85 °C) 0.94 W (derate 9.87 mW/°C above 85 °C) C Thermal Resistance - 101.4 °C/W (channel to die bottom) S Storage Temperature -65 to +150 °C R Operating Temperature -55 to +85 °C IE LIF
Outline Drawing
P M A E IS O N W LO NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. Standard Alternate 3. BACKSIDE METALLIZATION: GOLD. GP-2 (Gel Pack) [2] 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. [1] Refer to the “Packaging Information” section for die 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. packaging dimensions. 7. OVERALL DIE SIZE ±.002” [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
3
Application Support: Phone: 1-800-ANALOG-D
