Datasheet HMC943APM5E (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | >1.5 W (34 dBm), 24 GHz to 34 GHz, GaAs, pHEMT, MMIC, Power Amplifier |
| Pages / Page | 18 / 3 — Data Sheet. HMC943APM5E. SPECIFICATIONS ELECTRICAL SPECIFICATIONS. Table … |
| Revision | B |
| File Format / Size | PDF / 439 Kb |
| Document Language | English |
Data Sheet. HMC943APM5E. SPECIFICATIONS ELECTRICAL SPECIFICATIONS. Table 1. Parameter. Symbol Min Typ. Max Unit
Model Line for this Datasheet
Text Version of Document
Data Sheet HMC943APM5E SPECIFICATIONS ELECTRICAL SPECIFICATIONS
TA = 25°C, VD1 − VD8 = 5.5 V, quiescent supply current (IDDQ) = 1300 mA, and frequency range = 24 GHz to 29 GHz
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 24 29 GHz GAIN 20.5 23 dB Gain Variation over 0.04 dB/°C Temperature RETURN LOSS Input 12 dB Output 12 dB POWER Output Power for 1 dB P1dB 29 33 dBm Compression Saturated Output Power PSAT 34 dBm OUTPUT THIRD-ORDER IP3 39 dBm Output power (POUT) per tone = 22 dBm INTERCEPT SUPPLY VOLTAGE VDD 4 5.5 6 V QUIESCENT SUPPLY IDDQ 1300 mA Adjust VG1 or VG2 between −2 V and 0 V to achieve 1300 mA typical, CURRENT VGx = −0.85 V typical to achieve IDDQ = 1300 mA TA = 25°C, VD1 − VD8 = 5.5 V, IDDQ = 1300 mA, and frequency range = 29 GHz to 34 GHz
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 29 34 GHz GAIN 20.5 23 dB Gain Variation over 0.04 dB/°C Temperature RETURN LOSS Input 10 dB Output 13 dB POWER Output Power for 1 dB P1dB 30 33 dBm Compression Saturated Output Power PSAT 34 dBm OUTPUT THIRD-ORDER IP3 37.5 dBm POUT per tone = 22 dBm INTERCEPT SUPPLY VOLTAGE VDD 4 5.5 6 V QUIESCENT SUPPLY IDDQ 1300 mA Adjust VG1 or VG2 between −2 and 0 V to achieve 1300 mA typical, CURRENT VGx = −0.85 V typical to achieve IDDQ = 1300 mA Rev. B | Page 3 of 18 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION POWER DETECTION EVALUATION BOARD EVALUATION BOARD SCHEMATIC OUTLINE DIMENSIONS ORDERING GUIDE
TA = 25°C, VD1 − VD8 = 5.5 V, quiescent supply current (IDDQ) = 1300 mA, and frequency range = 24 GHz to 29 GHz
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 24 29 GHz GAIN 20.5 23 dB Gain Variation over 0.04 dB/°C Temperature RETURN LOSS Input 12 dB Output 12 dB POWER Output Power for 1 dB P1dB 29 33 dBm Compression Saturated Output Power PSAT 34 dBm OUTPUT THIRD-ORDER IP3 39 dBm Output power (POUT) per tone = 22 dBm INTERCEPT SUPPLY VOLTAGE VDD 4 5.5 6 V QUIESCENT SUPPLY IDDQ 1300 mA Adjust VG1 or VG2 between −2 V and 0 V to achieve 1300 mA typical, CURRENT VGx = −0.85 V typical to achieve IDDQ = 1300 mA TA = 25°C, VD1 − VD8 = 5.5 V, IDDQ = 1300 mA, and frequency range = 29 GHz to 34 GHz
Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
FREQUENCY RANGE 29 34 GHz GAIN 20.5 23 dB Gain Variation over 0.04 dB/°C Temperature RETURN LOSS Input 10 dB Output 13 dB POWER Output Power for 1 dB P1dB 30 33 dBm Compression Saturated Output Power PSAT 34 dBm OUTPUT THIRD-ORDER IP3 37.5 dBm POUT per tone = 22 dBm INTERCEPT SUPPLY VOLTAGE VDD 4 5.5 6 V QUIESCENT SUPPLY IDDQ 1300 mA Adjust VG1 or VG2 between −2 and 0 V to achieve 1300 mA typical, CURRENT VGx = −0.85 V typical to achieve IDDQ = 1300 mA Rev. B | Page 3 of 18 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION POWER DETECTION EVALUATION BOARD EVALUATION BOARD SCHEMATIC OUTLINE DIMENSIONS ORDERING GUIDE
