Datasheet HMC1132PM5E (Analog Devices)
| Manufacturer | Analog Devices |
| Description | 27 GHz to 32 GHz, GaAs, pHEMT, MMIC Power Amplifier |
| Pages / Page | 17 / 1 — 27 GHz to 32 GHz,. GaAs, pHEMT, MMIC Power Amplifier. Data Sheet. … |
| File Format / Size | PDF / 351 Kb |
| Document Language | English |
27 GHz to 32 GHz,. GaAs, pHEMT, MMIC Power Amplifier. Data Sheet. HMC1132PM5E. FEATURES. FUNCTIONAL BLOCK DIAGRAM. PSAT: 29.5 dBm
Model Line for this Datasheet
Text Version of Document
27 GHz to 32 GHz, GaAs, pHEMT, MMIC Power Amplifier Data Sheet HMC1132PM5E FEATURES FUNCTIONAL BLOCK DIAGRAM PSAT: 29.5 dBm C C C C C ND GG ND G V NI NI NI NI NI G High output IP3: 37 dBm 32 31 30 29 28 27 26 25 High gain: 24 dB (typical) at 29 GHz to 32 GHz DC supply: 5 V at 650 mA GND 1 24 GND HMC1132PM5E NIC 2 23 NIC 50 Ω matched input/output NIC 3 22 NIC 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2 GND 4 21 GND RFIN 5 20 RFOUT APPLICATIONS GND 6 19 GND NIC 7 18 NIC Point to point radios GND 8 17 GND Point to multipoint radios 9 10 11 12 13 14 15 16 PACKAGE Very small aperture terminals (VSATs) and satellite C C C C BASE ND NI NI DD1 NI NI DD2 ND communication (SATCOM) G V V G
001
Military and space NIC = NOT INTERNALLY CONNECTED.
17225- Figure 1.
GENERAL DESCRIPTION
The HMC1132PM5E is a four-stage, gallium arsenide (GaAs) multipoint radio systems. The amplifier configuration and high pseudomorphic high electron mobility transistor (pHEMT), gain make the HMC1132PM5E an ideal candidate for last stage monolithic microwave integrated circuit (MMIC) power signal amplification before the antenna. amplifier. The device operates from 27 GHz to 32 GHz, The HMC1132PM5E amplifier input/outputs (I/Os) are providing 24 dB of gain and 29.5 dBm of saturated output internally matched to 50 Ω. The device is housed in a RoHS power from a 5 V power supply. compliant, premolded cavity, 5 mm × 5 mm LFCSP package, The HMC1132PM5E exhibits excellent linearity with high making the device compatible with high volume surface-mount output third-order intercept (IP3) of 37 dBm, and it is technology (SMT) assembly equipment. optimized for high capacity, point to point and point to
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Application Circuit Evaluation Board Bill of Materials Evaluation Board Schematic Outline Dimensions Ordering Guide
001
Military and space NIC = NOT INTERNALLY CONNECTED.
17225- Figure 1.
GENERAL DESCRIPTION
The HMC1132PM5E is a four-stage, gallium arsenide (GaAs) multipoint radio systems. The amplifier configuration and high pseudomorphic high electron mobility transistor (pHEMT), gain make the HMC1132PM5E an ideal candidate for last stage monolithic microwave integrated circuit (MMIC) power signal amplification before the antenna. amplifier. The device operates from 27 GHz to 32 GHz, The HMC1132PM5E amplifier input/outputs (I/Os) are providing 24 dB of gain and 29.5 dBm of saturated output internally matched to 50 Ω. The device is housed in a RoHS power from a 5 V power supply. compliant, premolded cavity, 5 mm × 5 mm LFCSP package, The HMC1132PM5E exhibits excellent linearity with high making the device compatible with high volume surface-mount output third-order intercept (IP3) of 37 dBm, and it is technology (SMT) assembly equipment. optimized for high capacity, point to point and point to
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Application Circuit Evaluation Board Bill of Materials Evaluation Board Schematic Outline Dimensions Ordering Guide
