HMC1086 v06.0318 25 WATT GAN MMIC POWER AMPLIFIER,2 - 6 GHzAdditive Phase Noise Vs Offset Frequency, RF Frequency = 4 GHz, RF Input Power = 27 dBm (P1dB) IP -80 H -90 ) -100 z /H -110 R - C Bc (d E -120 ISE -130 W O N -140 O ASE -150 PH -160 -170 R & P -180 A 100 1K 10K 100K 1M E OFFSET FREQUENCY (Hz) IN S - L R IE Notes: LIF P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 5 Application Support: Phone: 1-800-ANALOG-D Document Outline General Description Gain and Return Loss Gain vs. Vdd Input Return Loss Output Return Loss Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin Pout vs. Temperature at Pin= 25dBm Pout vs. Vdd at Pin= 25dBm Psat vs. Temperature Psat vs. Vdd Drain Current vs. Pin OIP3 vs Pin/Tone IM3 vs. Pin/Tone Reverse Isolation Power Dissipation vs. Pin Second Harmonic vs. Pin Absolute Maximum Ratings[ Outline Drawing Pad Descriptions Application Circuit Assembly Diagram Mounting & Bonding Techniques for GaN MMICs