Datasheet HMC659LC5 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz |
| Pages / Page | 8 / 1 — HMC659LC5. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 15 GHz. Typical … |
| File Format / Size | PDF / 482 Kb |
| Document Language | English |
HMC659LC5. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 15 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC659LC5
v04.0614
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Typical Applications Features
The HMC659LC5 wideband PA is ideal for: P1dB Output Power: +27.5 dBm T • Telecom Infrastructure Gain: 19 dB M • Microwave Radio & VSAT Output IP3: +35 dBm • Military & Space Supply Voltage: +8V @ 300 mA S - S • Test Instrumentation 50 Ohm Matched Input/Output R • Fiber Optics 32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm2 IE LIF P
Functional Diagram General Description
M The HMC659LC5 is a GaAs MMIC pHEMT Distributed Power Amplifier which is housed in a R A leadless 5 x 5 mm RoHS compliant ceramic SMT E package operating between DC and 15 GHz. The W amplifier provides 19 dB of gain, +35 dBm output IP3 O and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply. Gain flatness is excel ent at ±1.4 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, R & P ECM, Radar and test equipment applications. The A HMC659LC5 amplifier I/Os are internal y matched E to 50 Ohms with no external components. The HMC659LC5 is compatible with high volume surface LIN mount manufacturing techniques.
Electrical Specifications, T = +25 °C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA* A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 6 6 - 11 11 - 15 GHz Gain 16 19 15 18 14 17 dB Gain Flatness ± 0.7 ± 0.4 ± 0.7 dB Gain Variation Over Temperature 0.015 0.019 0.022 dB/ °C Input Return Loss 20 18 17 dB Output Return Loss 19 20 15 dB Output Power for 1 dB Compression (P1dB) 23.5 26.5 24.5 27.5 23.5 26.5 dBm Saturated Output Power (Psat) 28.0 28.5 27.5 dBm Output Third Order Intercept (IP3) 35 32 29 dBm Noise Figure 3.0 2.5 3.5 dB Supply Current 300 300 300 mA (Idd) (Vdd= 8V, Vgg1= -0.8V Typ.) *Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical. I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners.ne: 978-250-33A4 p 3 p o lic ra a tiopp n S su@ p h po irtttit : Pe. hocnom e: 1-800-ANALOG-D
v04.0614
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Typical Applications Features
The HMC659LC5 wideband PA is ideal for: P1dB Output Power: +27.5 dBm T • Telecom Infrastructure Gain: 19 dB M • Microwave Radio & VSAT Output IP3: +35 dBm • Military & Space Supply Voltage: +8V @ 300 mA S - S • Test Instrumentation 50 Ohm Matched Input/Output R • Fiber Optics 32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm2 IE LIF P
Functional Diagram General Description
M The HMC659LC5 is a GaAs MMIC pHEMT Distributed Power Amplifier which is housed in a R A leadless 5 x 5 mm RoHS compliant ceramic SMT E package operating between DC and 15 GHz. The W amplifier provides 19 dB of gain, +35 dBm output IP3 O and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply. Gain flatness is excel ent at ±1.4 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, R & P ECM, Radar and test equipment applications. The A HMC659LC5 amplifier I/Os are internal y matched E to 50 Ohms with no external components. The HMC659LC5 is compatible with high volume surface LIN mount manufacturing techniques.
Electrical Specifications, T = +25 °C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA* A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 6 6 - 11 11 - 15 GHz Gain 16 19 15 18 14 17 dB Gain Flatness ± 0.7 ± 0.4 ± 0.7 dB Gain Variation Over Temperature 0.015 0.019 0.022 dB/ °C Input Return Loss 20 18 17 dB Output Return Loss 19 20 15 dB Output Power for 1 dB Compression (P1dB) 23.5 26.5 24.5 27.5 23.5 26.5 dBm Saturated Output Power (Psat) 28.0 28.5 27.5 dBm Output Third Order Intercept (IP3) 35 32 29 dBm Noise Figure 3.0 2.5 3.5 dB Supply Current 300 300 300 mA (Idd) (Vdd= 8V, Vgg1= -0.8V Typ.) *Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical. I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners.ne: 978-250-33A4 p 3 p o lic ra a tiopp n S su@ p h po irtttit : Pe. hocnom e: 1-800-ANALOG-D
