Datasheet HMC327MS8G, 327MS8GE (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz |
| Pages / Page | 6 / 4 — HMC327MS8G / 327MS8GE. GaAs InGaP HBT MMIC. 1/2 WATT POWER AMPLIFIER, 3 - … |
| File Format / Size | PDF / 330 Kb |
| Document Language | English |
HMC327MS8G / 327MS8GE. GaAs InGaP HBT MMIC. 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
Model Line for this Datasheet
Text Version of Document
HMC327MS8G / 327MS8GE
v05.0509
GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Absolute Maximum Ratings
30 250 Collector Bias Voltage (Vcc) +5.5V Control Voltage (Vpd) +5.5V 25 200 RF Input Power (RFIN)(Vs = Vctl = +5V) +16 dBm Junction Temperature 150 °C 20 150 Icq Ic Bm), Psat (dBm) q (mA) Continuous Pdiss (T = 85 °C) 1.88 W (derate 29 mW/°C above 85 °C) 15 100 Thermal Resistance 34 °C/W (junction to ground paddle) 11 P1dB 10 50 Psat Storage Temperature -65 to +150 °C Gain GAIN (dB), P1dB (d Operating Temperature -40 to +85 °C 5 0 T 2.5 3 3.5 4 4.5 5 Vctl (V) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS - SM S
Outline Drawing
R IE IF L P M R A E W O & P R NOTES: A 1. LEADFRAME MATERIAL: COPPER ALLOY E 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. IN 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. L 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] H327 HMC327MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] H327 HMC327MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Pho - n 25 e: 7 0- 81 3 3 3 2 4 9- 3 F 470 ax: 978 0 • Order o - n 25 lin 0 e a-t 3373 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
11 - 5
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v05.0509
GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Absolute Maximum Ratings
30 250 Collector Bias Voltage (Vcc) +5.5V Control Voltage (Vpd) +5.5V 25 200 RF Input Power (RFIN)(Vs = Vctl = +5V) +16 dBm Junction Temperature 150 °C 20 150 Icq Ic Bm), Psat (dBm) q (mA) Continuous Pdiss (T = 85 °C) 1.88 W (derate 29 mW/°C above 85 °C) 15 100 Thermal Resistance 34 °C/W (junction to ground paddle) 11 P1dB 10 50 Psat Storage Temperature -65 to +150 °C Gain GAIN (dB), P1dB (d Operating Temperature -40 to +85 °C 5 0 T 2.5 3 3.5 4 4.5 5 Vctl (V) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS - SM S
Outline Drawing
R IE IF L P M R A E W O & P R NOTES: A 1. LEADFRAME MATERIAL: COPPER ALLOY E 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. IN 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. L 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] H327 HMC327MS8G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] H327 HMC327MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Pho - n 25 e: 7 0- 81 3 3 3 2 4 9- 3 F 470 ax: 978 0 • Order o - n 25 lin 0 e a-t 3373 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
11 - 5
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
