Datasheet C2M1000170D (Wolfspeed) - 3
| Manufacturer | Wolfspeed |
| Description | Silicon Carbide Power MOSFET 1700 V 5.0 A 1.0 Ω |
| Pages / Page | 10 / 3 — Typical Performance. Conditions:. VGS = 16V. j = -55 °C. Tj = 25 °C. GS = … |
| File Format / Size | PDF / 996 Kb |
| Document Language | English |
Typical Performance. Conditions:. VGS = 16V. j = -55 °C. Tj = 25 °C. GS = 14V. VGS = 12V. tp = < 200 µs. GS = 20V. (A). VGS = 18V
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Text Version of Document
Typical Performance 6 6 Conditions: VGS = 16V Conditions: T V j = -55 °C Tj = 25 °C GS = 14V VGS = 12V 5 tp = < 200 µs tp = < 200 µs V 5 GS = 14V V V GS = 20V GS = 20V (A) V VGS = 18V GS = 18V (A) 4 4 VGS = 16V t, I DS V t, I DS GS = 12V V 3 3 GS = 10V e Curren e Curren 2 2 in-Sourc V in-Sourc GS = 10V Dra Dra 1 1 0 0 0 4 8 12 16 20 0 4 8 12 16 20 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 °C Figure 2. Output Characteristics TJ = 25 °C
6 2.5 Conditions: V Conditions: T GS = 20V j = 150 °C IDS = 2 A tp = < 200 µs VGS = 18V VGS = 20 V 5 V 2.0 tp < 200 µs GS = 16V VGS = 12V VGS = 14V V .) (A) GS = 10V 4 (P.U t, I DS n O 1.5 3 e, R DS e Curren 1.0 2 in-Sourc On Resistanc Dra 0.5 1 0 0.0 0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150 Junction Temperature, Tj (°C) Drain-Source Voltage, VDS (V)
Figure 3. Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature
2.5 2.0 Conditions: Conditions: VGS = 20 V IDS = 2 A tp < 200 µs tp < 200 µs 2.0 1.6 s) s) (Ohm Tj = 150 °C Ohm n 1.5 1.2 O (m n O VGS = 14 V e, R DS 1.0 e, R DS 0.8 VGS = 16 V VGS = 18 V Tj = 25 °C VGS = 20 V 0.5 On Resistanc 0.4 Tj = -55 °C On Resistanc 0.0 0.0 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 Drain-Source Current, IDS (A) Junction Temperature, Tj (°C)
Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage
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C2M1000170D Rev. 7, 02-2021
Figure 1. Output Characteristics TJ = -55 °C Figure 2. Output Characteristics TJ = 25 °C
6 2.5 Conditions: V Conditions: T GS = 20V j = 150 °C IDS = 2 A tp = < 200 µs VGS = 18V VGS = 20 V 5 V 2.0 tp < 200 µs GS = 16V VGS = 12V VGS = 14V V .) (A) GS = 10V 4 (P.U t, I DS n O 1.5 3 e, R DS e Curren 1.0 2 in-Sourc On Resistanc Dra 0.5 1 0 0.0 0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150 Junction Temperature, Tj (°C) Drain-Source Voltage, VDS (V)
Figure 3. Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature
2.5 2.0 Conditions: Conditions: VGS = 20 V IDS = 2 A tp < 200 µs tp < 200 µs 2.0 1.6 s) s) (Ohm Tj = 150 °C Ohm n 1.5 1.2 O (m n O VGS = 14 V e, R DS 1.0 e, R DS 0.8 VGS = 16 V VGS = 18 V Tj = 25 °C VGS = 20 V 0.5 On Resistanc 0.4 Tj = -55 °C On Resistanc 0.0 0.0 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 Drain-Source Current, IDS (A) Junction Temperature, Tj (°C)
Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage
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C2M1000170D Rev. 7, 02-2021
