Datasheet C2M0045170P (Wolfspeed) - 4
| Manufacturer | Wolfspeed |
| Description | Silicon Carbide Power MOSFET 1700 V 72 A 45 mΩ |
| Pages / Page | 10 / 4 — Typical Performance. 125. Conditions:. DS = 20 V. tp < 200 µs. 100. … |
| File Format / Size | PDF / 1.3 Mb |
| Document Language | English |
Typical Performance. 125. Conditions:. DS = 20 V. tp < 200 µs. 100. (A). -30. J = 150 °C. nt, I DS 75. nt, I DS. TJ = 25 °C. -60. TJ = -40 °C
Model Line for this Datasheet
Text Version of Document
Typical Performance 125 -7 -6 -5 -4 -3 -2 -1 0 Conditions: V 0 DS = 20 V tp < 200 µs 100 (A) T (A)
VGS = -5 V
-30 J = 150 °C
VGS = 0 V
nt, I DS 75 nt, I DS TJ = 25 °C -60
VGS = -2 V
50 TJ = -40 °C in-Source Curre -90 in-Source Curre Dra Dra 25 -120 Conditions: 0 TJ = -40°C 0 2 4 6 8 10 12 14 tp < 200 µs -150 Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)
Figure 7. Transfer Characteristic For Various Junction Temperatures Figure 8. Body Diode Characteristic at -40 ºC
-7 -6 -5 -4 -3 -2 -1 0 -7 -6 -5 -4 -3 -2 -1 0 0 0 (A)
V
(A)
GS = -5 V V
-30
VGS = -5 V
-30
GS = 0 V VGS = 0 V
nt, I DS nt, I DS
VGS = -2 V
-60 -60
VGS = -2 V
-90 in-Source Curre -90 in-Source Curre Dra Dra -120 -120 Conditions: Conditions: TJ = 25°C TJ = 150°C tp < 200 µs tp < 200 µs -150 -150 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC
4.0 25 Conditons Conditions: 3.5 VGS =VDS IDS = 50 A IDS = 18 mA 20 IGS = 100 mA VDS = 1200 V 3.0 TJ = 25 °C (V) (V) 2.5 15 V th V GS 2.0 10 1.5 e Voltage, hold Voltage, 5 1.0 e-Sourc Thres Gat 0.5 0 0.0 -5 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 200 Junction Temperature TJ (°C) Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristic
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C2M0045170P Rev. -, 04-2018
VGS = -5 V
-30 J = 150 °C
VGS = 0 V
nt, I DS 75 nt, I DS TJ = 25 °C -60
VGS = -2 V
50 TJ = -40 °C in-Source Curre -90 in-Source Curre Dra Dra 25 -120 Conditions: 0 TJ = -40°C 0 2 4 6 8 10 12 14 tp < 200 µs -150 Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)
Figure 7. Transfer Characteristic For Various Junction Temperatures Figure 8. Body Diode Characteristic at -40 ºC
-7 -6 -5 -4 -3 -2 -1 0 -7 -6 -5 -4 -3 -2 -1 0 0 0 (A)
V
(A)
GS = -5 V V
-30
VGS = -5 V
-30
GS = 0 V VGS = 0 V
nt, I DS nt, I DS
VGS = -2 V
-60 -60
VGS = -2 V
-90 in-Source Curre -90 in-Source Curre Dra Dra -120 -120 Conditions: Conditions: TJ = 25°C TJ = 150°C tp < 200 µs tp < 200 µs -150 -150 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC
4.0 25 Conditons Conditions: 3.5 VGS =VDS IDS = 50 A IDS = 18 mA 20 IGS = 100 mA VDS = 1200 V 3.0 TJ = 25 °C (V) (V) 2.5 15 V th V GS 2.0 10 1.5 e Voltage, hold Voltage, 5 1.0 e-Sourc Thres Gat 0.5 0 0.0 -5 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 200 Junction Temperature TJ (°C) Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristic
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C2M0045170P Rev. -, 04-2018
