Datasheet MASTERGAN4 (STMicroelectronics)
| Manufacturer | STMicroelectronics |
| Description | High power density 600V half-bridge driver with two enhancement mode GaN HEMT |
| Pages / Page | 27 / 1 — MASTERGAN4. Features. Applications. Product status link. Product label. … |
| File Format / Size | PDF / 480 Kb |
| Document Language | English |
MASTERGAN4. Features. Applications. Product status link. Product label. Description. DS13686. Rev 1. April 2021
Model Line for this Datasheet
Text Version of Document
MASTERGAN4
Datasheet High power density 600V half-bridge driver with two enhancement mode GaN HEMT
Features
• 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ – IDS(MAX) = 6.5 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal bootstrap diode • Interlocking function • Dedicated pin for shut down functionality • Accurate internal timing match • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Over temperature protection • Bill of material reduction • Very compact and simplified layout • Flexible, easy and fast design.
Applications
Switch-mode power supplies
Product status link
Chargers and adapters MASTERGAN4 High-voltage PFC, DC-DC and DC-AC Converters
Product label Description
The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN4 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The extended range of the input pins allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN4 operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.
DS13686
-
Rev 1
-
April 2021
www.st.com For further information contact your local STMicroelectronics sales office. Document Outline Features Applications Description 1 Block diagram 2 Pin descriptions and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history
Datasheet High power density 600V half-bridge driver with two enhancement mode GaN HEMT
Features
• 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ – IDS(MAX) = 6.5 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal bootstrap diode • Interlocking function • Dedicated pin for shut down functionality • Accurate internal timing match • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Over temperature protection • Bill of material reduction • Very compact and simplified layout • Flexible, easy and fast design.
Applications
Switch-mode power supplies
Product status link
Chargers and adapters MASTERGAN4 High-voltage PFC, DC-DC and DC-AC Converters
Product label Description
The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN4 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The extended range of the input pins allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN4 operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.
DS13686
-
Rev 1
-
April 2021
www.st.com For further information contact your local STMicroelectronics sales office. Document Outline Features Applications Description 1 Block diagram 2 Pin descriptions and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history
