Datasheet UF3SC065030B7S (UnitedSiC) - 8

ManufacturerUnitedSiC
Description650V-27mW SiC FET
Pages / Page10 / 8 — 10,000. 70. C. 60. iss. ). A. 1,000. (. pF. I. D. 50. (. t,. C. n. ,. C. …
File Format / SizePDF / 440 Kb
Document LanguageEnglish

10,000. 70. C. 60. iss. ). A. 1,000. (. pF. I. D. 50. (. t,. C. n. ,. C. e. e. oss. rr. 40. nc. 100. Cu. ita. n. 30. ac. ai. p. r. D. Ca. C. 20. 10. D. C. 10. rss. 1. 0. 0. 100. 200. 300. 400. 500. 600. -75. -50. -25. 0. 25. 50. 75. 100

10,000 70 C 60 iss ) A 1,000 ( pF I D 50 ( t, C n , C e e oss rr 40 nc 100 Cu ita n 30 ac ai p r D Ca C 20 10 D C 10 rss 1 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100

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10,000 70 C 60 iss ) A 1,000 ( pF I D 50 ( t, C n , C e e oss rr 40 nc 100 Cu ita n 30 ac ai p r D Ca C 20 10 D C 10 rss 1 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100 125 150 175 Drain-Source Voltage, VDS (V) Case Temperature, TC (°C) Figure 13. Typical capacitances at f = 100kHz and VGS Figure 14. DC drain current derating = 0V 250 1 ) W( 200 /W C ot °( P t ,n JC 0.1 io 150 Z q , D = 0.5 at e ip nc D = 0.3 ss a i 100 d D = 0.1 D r D = 0.05 e mpe 0.01 I w l o a D = 0.02 P 50 mre D = 0.01 Th Single Pulse 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 175 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Case Temperature, TC (°C) Pulse Time, tp (s) Figure 15. Total power dissipation Figure 16. Maximum transient thermal impedance Datasheet: UF3SC065030B7S Rev. A, December 2020 8