Datasheet MMBTA63, MMBTA64 (Diodes) - 2
| Manufacturer | Diodes |
| Description | PNP Small Signal Transistor in SOT23 |
| Pages / Page | 6 / 2 — MMBTA63 / MMBTA64. Absolute Maximum Ratings. Characteristic. Symbol. … |
| File Format / Size | PDF / 385 Kb |
| Document Language | English |
MMBTA63 / MMBTA64. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. ESD Ratings. JEDEC Class
Model Line for this Datasheet
Text Version of Document
MMBTA63 / MMBTA64 Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -10 V Collector Current - Continuous IC -500 mA
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 300 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 417 °C/W Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C
ESD Ratings
(Note 6)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 400 400 ) 350 W m)( 350 300 W N m O(I T 300 N A 250 O PIITSAS 250 P I 200 I D S S RIE D 200 W 150 R O E P W , 150 D 100 O P P , D 100 P 50 500 0 25 50 75 100 125 150 175 200 0 T , AMBIENT TEMPERATURE (癈 ) 0 A 25 50 75 100 125 150 175 200 Fig. 1, Max Power Dissipation vs. Ambient Temperature T , AMBIENT TEMPERATURE (癈 (° ) C) A Fig. 1, Max Power Dissipation vs. Ambient Temperature MMBTA63 / MMBTA64 2 of 6 November 2018 Document number: DS30055 Rev. 9 - 2
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© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -10 V Collector Current - Continuous IC -500 mA
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 300 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 417 °C/W Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C
ESD Ratings
(Note 6)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 400 400 ) 350 W m)( 350 300 W N m O(I T 300 N A 250 O PIITSAS 250 P I 200 I D S S RIE D 200 W 150 R O E P W , 150 D 100 O P P , D 100 P 50 500 0 25 50 75 100 125 150 175 200 0 T , AMBIENT TEMPERATURE (癈 ) 0 A 25 50 75 100 125 150 175 200 Fig. 1, Max Power Dissipation vs. Ambient Temperature T , AMBIENT TEMPERATURE (癈 (° ) C) A Fig. 1, Max Power Dissipation vs. Ambient Temperature MMBTA63 / MMBTA64 2 of 6 November 2018 Document number: DS30055 Rev. 9 - 2
www.diodes.com
© Diodes Incorporated
