Datasheet MMBTA63, MMBTA64 (Diodes) - 3
| Manufacturer | Diodes |
| Description | PNP Small Signal Transistor in SOT23 |
| Pages / Page | 6 / 3 — MMBTA63 / MMBTA64. Electrical Characteristics. Characteristic. Symbol. … |
| File Format / Size | PDF / 385 Kb |
| Document Language | English |
MMBTA63 / MMBTA64. Electrical Characteristics. Characteristic. Symbol. Min. Max. Unit. Test Condition. OFF CHARACTERISTICS (Note 7)
Model Line for this Datasheet
Text Version of Document
MMBTA63 / MMBTA64 Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Collector-Emitter Breakdown Voltage BVCEO -30 V IC = -100A, VBE = 0V Collector Cut-Off Current ICBO -100 nA VCB = -30V, IE = 0 Emitter Cut-Off Current IEBO -100 nA VEB = -10V, IC = 0
ON CHARACTERISTICS (Note 7)
DC Current Gain MMBTA63 5,000 IC = -10mA, VCE = -5.0V MMBTA64 10,000 I h C = -10mA, VCE = -5.0V MMBTA63 FE 10,000 IC = -100mA, VCE = -5.0V MMBTA64 20,000 IC = -100mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) -1.5 V IC = -100mA, IB = -100A Base-Emitter Saturation Voltage VBE(SAT) -2.0 V IC = -100mA, VCE = -5.0V
SMALL SIGNAL CHARACTERISTICS
V Current Gain-Bandwidth Product f CE = -5.0V, IC = -10mA, T 125 MHz f = 100MHz Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMBTA63 / MMBTA64 3 of 6 November 2018 Document number: DS30055 Rev. 9 - 2
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© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Collector-Emitter Breakdown Voltage BVCEO -30 V IC = -100A, VBE = 0V Collector Cut-Off Current ICBO -100 nA VCB = -30V, IE = 0 Emitter Cut-Off Current IEBO -100 nA VEB = -10V, IC = 0
ON CHARACTERISTICS (Note 7)
DC Current Gain MMBTA63 5,000 IC = -10mA, VCE = -5.0V MMBTA64 10,000 I h C = -10mA, VCE = -5.0V MMBTA63 FE 10,000 IC = -100mA, VCE = -5.0V MMBTA64 20,000 IC = -100mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) -1.5 V IC = -100mA, IB = -100A Base-Emitter Saturation Voltage VBE(SAT) -2.0 V IC = -100mA, VCE = -5.0V
SMALL SIGNAL CHARACTERISTICS
V Current Gain-Bandwidth Product f CE = -5.0V, IC = -10mA, T 125 MHz f = 100MHz Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMBTA63 / MMBTA64 3 of 6 November 2018 Document number: DS30055 Rev. 9 - 2
www.diodes.com
© Diodes Incorporated
