Datasheet PC817 (First Silicon) - 2

PC817
MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Forward Current IF 50 mA Input Reverse Voltage VR 6 V Power Dissipation PD 70 mW Collector Power Dissipation PC 150 mW Collector Current IC 50 mA Output Collector-Emitter Voltage VCEO 80 V Emitter-Collector Voltage VECO 6 V Total Power Dissipation Ptot 200 mW Isolation Voltage VISO 5000 Vrms Operating Temperature Topr -50 110 Storage Temperature Tstg -55~125 Soldering Temperature Tsol 260 ELECTRO-OPTICAL CHARACTERISTICS (Ta=25℃ unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward VF IF=20mA - 1.2 1.4 V Input Reverse Current IR VR=4V - - 10 uA Terminal Capacitance Ct V=0, f=1kHz - 30 250 pF Collector Dark Current ICEO VCE=20V, IF=0 - - 100 nA Collector-Emitter Breakdown BV Output Voltage CEO IC=0.1mA, IF=0 80 - - V Emitter-Collector Breakdown BV Voltage ECO 10uA, IF=0 6 - - V *Current Transfer Ratio CTR IF=5mA, VCE=5V 50 - 600 % Collector-Emitter Saturation V Voltage CE(sat) IF=20mA, IC=1mA - 0.1 0.2 V Transfer Isolation Resistance RISO DC500V, 40~60% R.H. 5 1010 1 1011 - Characteristics Floating Capacitance Cf V=0, f=1MHz - 0.6 1.0 pF Cut-off Frequency FC VCE=5V, IC=2mA, RL=100 , -3dB - 80 - kHz Rise Time Tr VCE=2V, IC=2mA, RL=100 - 4 18 us Fall Time Tf VCE=2V, IC=2mA, RL=100 - 3 18 us IC * CTR = 100% IF 2016. 07. 30 Revision No : 0 2/4