AO3401A30V P-Channel MOSFETGeneral DescriptionProduct Summary The AO3401A uses advanced trench technology to VDS -30V provide excellent RDS(ON) , low gate charge and operation ID (at VGS=-10V) -4.0A gate voltages as low as 2.5V. This device is suitable for RDS(ON) (at VGS=-10V) < 50mΩ use as a load switch or other general applications. RDS(ON) (at VGS =-4.5V) < 60mΩ RDS(ON) (at VGS=-2.5V) < 85mΩ SOT23Top View Bottom View D D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted ParameterSymbolMaximumUnits Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain TA=25°C -4 ID Current TA=70°C -3.2 A Pulsed Drain Current C IDM -27 TA=25°C 1.4 PD W Power Dissipation B TA=70°C 0.9 Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal Characteristics ParameterSymbolTypMaxUnits Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W RθJA Maximum Junction-to-Ambient A D Steady-State 100 125 °C/W Maximum Junction-to-Lead Steady-State RθJL 63 80 °C/W Rev 3: Mar. 2011 www.aosmd.com Page 1 of 5