Datasheet AO3401A (Alpha & Omega) - 2
| Manufacturer | Alpha & Omega |
| Description | 30V P-Channel MOSFET |
| Pages / Page | 5 / 2 — AO3401A. Electrical Characteristics (TJ=25°C unless otherwise noted). … |
| File Format / Size | PDF / 237 Kb |
| Document Language | English |
AO3401A. Electrical Characteristics (TJ=25°C unless otherwise noted). Symbol. Parameter. Conditions. Min. Typ. Max. Units
Model Line for this Datasheet
Text Version of Document
AO3401A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BV I DSS Drain-Source Breakdown Voltage D=-250µA, VGS=0V -30 V VDS=-30V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current µA TJ=55°C -5 I Gate-Body leakage current V GSS DS=0V, VGS= ±12V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 -0.9 -1.3 V I V D(ON) On state drain current GS=-10V, VDS=-5V -27 A VGS=-10V, ID=-4.0A 41 50 mΩ TJ=125°C 62 75 RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3.5A 47 60 mΩ VGS=-2.5V, ID=-2.5A 60 85 mΩ g Forward Transconductance V FS DS=-5V, ID=-4.0A 17 S V Diode Forward Voltage I SD S=-1A,VGS=0V -0.7 -1 V IS Maximum Body-Diode Continuous Current -2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 645 pF C V oss Output Capacitance GS=0V, VDS=-15V, f=1MHz 80 pF Crss Reverse Transfer Capacitance 55 pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 4 7.8 12 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 14 nC Qg(4.5V) Total Gate Charge 7 nC VGS=-10V, VDS=-15V, ID=-4.0A Qgs Gate Source Charge 1.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time V 3.5 ns GS=-10V, VDS=-15V, RL=3.75Ω, t R D(off) Turn-Off DelayTime GEN=3Ω 41 ns tf Turn-Off Fall Time 9 ns trr Body Diode Reverse Recovery Time IF=-4.0A, dI/dt=100A/µs 11 ns Qrr Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/µs 3.5 nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Mar. 2011
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BV I DSS Drain-Source Breakdown Voltage D=-250µA, VGS=0V -30 V VDS=-30V, VGS=0V -1 IDSS Zero Gate Voltage Drain Current µA TJ=55°C -5 I Gate-Body leakage current V GSS DS=0V, VGS= ±12V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 -0.9 -1.3 V I V D(ON) On state drain current GS=-10V, VDS=-5V -27 A VGS=-10V, ID=-4.0A 41 50 mΩ TJ=125°C 62 75 RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-3.5A 47 60 mΩ VGS=-2.5V, ID=-2.5A 60 85 mΩ g Forward Transconductance V FS DS=-5V, ID=-4.0A 17 S V Diode Forward Voltage I SD S=-1A,VGS=0V -0.7 -1 V IS Maximum Body-Diode Continuous Current -2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 645 pF C V oss Output Capacitance GS=0V, VDS=-15V, f=1MHz 80 pF Crss Reverse Transfer Capacitance 55 pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 4 7.8 12 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 14 nC Qg(4.5V) Total Gate Charge 7 nC VGS=-10V, VDS=-15V, ID=-4.0A Qgs Gate Source Charge 1.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time V 3.5 ns GS=-10V, VDS=-15V, RL=3.75Ω, t R D(off) Turn-Off DelayTime GEN=3Ω 41 ns tf Turn-Off Fall Time 9 ns trr Body Diode Reverse Recovery Time IF=-4.0A, dI/dt=100A/µs 11 ns Qrr Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/µs 3.5 nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Mar. 2011
www.aosmd.com
Page 2 of 5
