Datasheet FDN302P (Fairchild)

F DN30
October 2000
2 P FDN302P P-Channel 2.5V Specified PowerTrench

MOSFET General Description Features
This P-Channel 2.5V specified MOSFET uses a rugged • –20 V, –2.4 A. RDS(ON) = 0.055 Ω @ VGS = –4.5 V gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management RDS(ON) = 0.080 Ω @ VGS = –2.5 V applications with a wide range of gate drive voltage • Fast switching speed (2.5V – 12V). •
Applications
High performance trench technology for extremely low RDS(ON) • Power management • SuperSOTTM -3 provides low R • DS(ON) and 30% higher Load switch power handling capability than SOT23 in the same • Battery protection footprint
D
D
S
G S
TM G SuperSOT -3 Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) –2.4 A – Pulsed –10 PD Maximum Power Dissipation (Note 1a) 0.5 W (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
302 FDN302P 7’’ 8mm 3000 units 2000 Fairchild Semiconductor Corporation FDN302P Rev C(W)