Datasheet FDN302P (Fairchild) - 3

ManufacturerFairchild
DescriptionP-Channel 2.5V Specified PowerTrench MOSFET
Pages / Page5 / 3 — F DN30. Typical Characteristics. 2 P. ANC. T IS S. NT (. RMALIZE. , NO. …
File Format / SizePDF / 106 Kb
Document LanguageEnglish

F DN30. Typical Characteristics. 2 P. ANC. T IS S. NT (. RMALIZE. , NO. URCE. , DRAIN CURRE. D-I. DRAIN-. D, DRAIN CURRENT (A)

F DN30 Typical Characteristics 2 P ANC T IS S NT ( RMALIZE , NO URCE , DRAIN CURRE D-I DRAIN- D, DRAIN CURRENT (A)

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F DN30 Typical Characteristics 2 P
15 3 V = -4.5V GS
E
-3.5V VGS = -2.0V
)
12 -4.0V -3.0V -2.5V
ANC
2.5
A D T IS S NT ( E
9
-R
2
N RMALIZE O
-2.5V
, NO
6 1.5
N) URCE
-3.0V
(O O
-2.0V -3.5V
DS S , DRAIN CURRE R
-4.0V
D-I
1 3 -4.5V
DRAIN-
0.5 0 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5
-I -V D, DRAIN CURRENT (A) DS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.5 0.16 I = -1.2 A D
E
I 1.4 D = -2.4A V 0.14
ANC
GS = -4.5V
HM) T D
1.3
O IS ( S
0.12
E
1.2
-R N ANCE
0.1
T RMALIZE O
1.1
IS S
T = 125oC A
E , NO
0.08
N)
1
URCE -R (O O N DS S R , O
0.9 0.06
N) (O
TA = 25oC
DS
0.8
DRAIN- R
0.04 0.7 0.02 -50 -25 0 25 50 75 100 125 150 1.5 2 2.5 3 3.5 4 4.5 5
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage.
12 10 V = 0V V = - 5V
)
GS DS TA = 125oC 25oC
A
10
)
1
NT ( A
-55oC
NT (
8 T 0.1 A = 125oC 25oC 6
DRAIN CURRE
0.01 -55oC
SE
4
, DRAIN CURRE D -I EVER
0.001 2
, R S -I
0.0001 0 0 0.2 0.4 0.6 0.8 1 1.2 0.5 1 1.5 2 2.5 3
-VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDN302P Rev C(W)