Datasheet 2N3019, 2N3020 (Comset Semiconductors) - 2

NPN 2N3019 – 2N3020
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol ICBO IEBO
VCEO
VCBO
VEBO hFE VCE(SAT) VBE(SAT) Ratings Test Condition(s) VCB =950 V
IE =0
Collector Cutoff Current
VCB =90 V, IE =0
Tj =150°C
VEB =5 V
Emitter Cutoff Current
IC =0
Collector Emitter Breakdown IC =10 mA
Voltage
IB =0
Collector Base Breakdown
IC =100 µA
Voltage
IE =0
Emitter Base Breakdown
IE =100 µA
Voltage
IC =0
IC =0.1 mA
VCE =10 V
IC =10 mA
VCE =10 V
IC =150 mA
VCE =10 V
DC Current Gain (*)
IC =500 mA
VCE =10 V
IC =1 A
VCE =10 V
IC =150 mA
VCE =10 V
Tamb = -55°C
IC =150 mA
Collector-Emitter saturation IB =15 mA
Voltage (*)
IC =500 mA
IB =50 mA
Base-Emitter saturation
IC =150 mA
IB =15 mA
Voltage (*) 16/10/2012 2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3019
2N3020
2N3019
2N3020
2N3019 COMSET SEMICONDUCTORS Min Typ Max Unit -10 nA -10 µA -10 nA 80 -V 140 -V 7 -V 50
30
90
40
100
40
50
30 -100
120
300
120
100 15 -40 -0.2 -0.5 -1.1 -V 2/4