Datasheet ADG5208, ADG5209 (Analog Devices) - 5
| Manufacturer | Analog Devices |
| Description | High Voltage Latch-Up Proof, 4-/8-Channel Multiplexers |
| Pages / Page | 24 / 5 — Data Sheet. ADG5208/ADG5209. Parameter. 25°C. −40°C to +85°C. −40°C to … |
| Revision | C |
| File Format / Size | PDF / 472 Kb |
| Document Language | English |
Data Sheet. ADG5208/ADG5209. Parameter. 25°C. −40°C to +85°C. −40°C to +125°C. Unit. Test Conditions/Comments. 12 V SINGLE SUPPLY
Model Line for this Datasheet
Text Version of Document
link to page 16 link to page 16 link to page 16 link to page 16 link to page 17 link to page 17 link to page 17 link to page 17 link to page 18 link to page 6
Data Sheet ADG5208/ADG5209 Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
CS (Off) 2.8 pF typ VS = 0 V, f = 1 MHz CD (Off) ADG5208 33 pF typ VS = 0 V, f = 1 MHz ADG5209 17 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) ADG5208 36 pF typ VS = 0 V, f = 1 MHz ADG5209 21 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +22 V, VSS = −22 V IDD 50 µA typ Digital inputs = 0 V or VDD 70 110 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance, RON 350 Ω typ VS = 0 V to 10 V, IS = −1 mA; see Figure 28 500 610 700 Ω max VDD = 10.8 V, VSS = 0 V On-Resistance Match Between 5 Ω typ VS = 0 V to 10 V, IS = −1 mA Channels, ∆RON 20 22 24 Ω max On-Resistance Flatness, RFLAT (ON) 160 Ω typ VS = 0 V to 10 V, IS = −1 mA 280 335 370 Ω max LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 30 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.005 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 30 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = 1 V/10 V; see Figure 27 ±0.2 ±0.5 ±1.4 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 200 ns typ RL = 300 Ω, CL = 35 pF 250 295 335 ns max VS = 8 V; see Figure 33 tON (EN) 180 ns typ RL = 300 Ω, CL = 35 pF 225 280 320 ns max VS = 8 V; see Figure 35 tOFF (EN) 165 ns typ RL = 300 Ω, CL = 35 pF 200 225 245 ns max VS = 8 V; see Figure 35 Break-Before-Make Time Delay, tD 95 ns typ RL = 300 Ω, CL = 35 pF 50 ns min VS1 = VS2 = 8 V; see Figure 34 Charge Injection, QINJ 0.2 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 36 Rev. C | Page 5 of 24 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide
Data Sheet ADG5208/ADG5209 Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
CS (Off) 2.8 pF typ VS = 0 V, f = 1 MHz CD (Off) ADG5208 33 pF typ VS = 0 V, f = 1 MHz ADG5209 17 pF typ VS = 0 V, f = 1 MHz CD (On), CS (On) ADG5208 36 pF typ VS = 0 V, f = 1 MHz ADG5209 21 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +22 V, VSS = −22 V IDD 50 µA typ Digital inputs = 0 V or VDD 70 110 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test.
12 V SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 3. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance, RON 350 Ω typ VS = 0 V to 10 V, IS = −1 mA; see Figure 28 500 610 700 Ω max VDD = 10.8 V, VSS = 0 V On-Resistance Match Between 5 Ω typ VS = 0 V to 10 V, IS = −1 mA Channels, ∆RON 20 22 24 Ω max On-Resistance Flatness, RFLAT (ON) 160 Ω typ VS = 0 V to 10 V, IS = −1 mA 280 335 370 Ω max LEAKAGE CURRENTS VDD = 13.2 V, VSS = 0 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 30 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.005 nA typ VS = 1 V/10 V, VD = 10 V/1 V; see Figure 30 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = 1 V/10 V; see Figure 27 ±0.2 ±0.5 ±1.4 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 200 ns typ RL = 300 Ω, CL = 35 pF 250 295 335 ns max VS = 8 V; see Figure 33 tON (EN) 180 ns typ RL = 300 Ω, CL = 35 pF 225 280 320 ns max VS = 8 V; see Figure 35 tOFF (EN) 165 ns typ RL = 300 Ω, CL = 35 pF 200 225 245 ns max VS = 8 V; see Figure 35 Break-Before-Make Time Delay, tD 95 ns typ RL = 300 Ω, CL = 35 pF 50 ns min VS1 = VS2 = 8 V; see Figure 34 Charge Injection, QINJ 0.2 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF; see Figure 36 Rev. C | Page 5 of 24 Document Outline Features Applications Functional Block Diagrams General Description Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Terminology Trench Isolation Applications Information Outline Dimensions Ordering Guide
