Datasheet STTH1L06 (STMicroelectronics) - 5
| Manufacturer | STMicroelectronics |
| Description | Turbo 2 ultrafast high voltage rectifier |
| Pages / Page | 9 / 5 — STTH1L06. Characteristics. Figure 11. Transient peak forward voltage. … |
| File Format / Size | PDF / 112 Kb |
| Document Language | English |
STTH1L06. Characteristics. Figure 11. Transient peak forward voltage. Figure 12. Forward recovery time versus dIF/dt
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Text Version of Document
STTH1L06 Characteristics Figure 11. Transient peak forward voltage Figure 12. Forward recovery time versus dIF/dt versus dIF/dt (90% confidence) (90% confidence) VFP(V) tfr(ns) 25 200
IF=IF(av) IF=IF(av) Tj=125°C
180
VFR=1.1 x VF max. Tj=125°C
20 160 140 15 120 100 10 80 60 5 40 dIF/dt(A/µs) 20 dIF/dt(A/µs) 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 Figure 13. Junction capacitance versus Figure 14. Thermal resistance junction to reverse voltage applied ambient versus copper surface (typical values) under each lead C(pF) Rth(j-a)(°C/W) 100 110
F=1MHz
Epoxy printed circuit board FR4, copper thickness: 35 µm
Vosc=30mV
100
Tj=25°C
90 80
DO-41 Lleads=10mm
70 60
SMB
10 50 40 30 20 VR(V) 10 S(cm²) 1 0 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 10 Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) Rth(j-a)(°C/W) 140 130 SMA 120 110 100 90 80 70 60 50 40 30 20 10 S(cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Doc ID 8321 Rev 4 5/9 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameters Table 4. Static electrical characteristics Table 5. Dynamic characteristics Figure 1. Conduction losses versus average current Figure 2. Forward voltage drop versus forward current Figure 3. Relative variation of thermal impedance junction ambient versus pulse duration Figure 4. Relative variation of thermal impedance junction ambient versus pulse duration Figure 5. Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) Figure 6. Peak reverse recovery current versus dIF/dt (90% confidence) Figure 7. Reverse recovery time versus dIF/dt (90% confidence) Figure 8. Reverse recovery charges versus dIF/dt (90% confidence) Figure 9. Softness factor versus dIF/dt (typical values) Figure 10. Relative variations of dynamic parameters versus junction temperature Figure 11. Transient peak forward voltage versus dIF/dt (90% confidence) Figure 12. Forward recovery time versus dIF/dt (90% confidence) Figure 13. Junction capacitance versus reverse voltage applied (typical values) Figure 14. Thermal resistance junction to ambient versus copper surface under each lead Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) 2 Package information Table 6. SMA dimensions Figure 16. Footprint (dimensions in mm) Table 7. SMB dimensions Figure 17. Footprint (dimensions in mm) Table 8. DO-41 (plastic) dimensions 3 Ordering information Table 9. Ordering information 4 Revision history Table 10. Document revision history
IF=IF(av) IF=IF(av) Tj=125°C
180
VFR=1.1 x VF max. Tj=125°C
20 160 140 15 120 100 10 80 60 5 40 dIF/dt(A/µs) 20 dIF/dt(A/µs) 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 180 200 Figure 13. Junction capacitance versus Figure 14. Thermal resistance junction to reverse voltage applied ambient versus copper surface (typical values) under each lead C(pF) Rth(j-a)(°C/W) 100 110
F=1MHz
Epoxy printed circuit board FR4, copper thickness: 35 µm
Vosc=30mV
100
Tj=25°C
90 80
DO-41 Lleads=10mm
70 60
SMB
10 50 40 30 20 VR(V) 10 S(cm²) 1 0 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 10 Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) Rth(j-a)(°C/W) 140 130 SMA 120 110 100 90 80 70 60 50 40 30 20 10 S(cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Doc ID 8321 Rev 4 5/9 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameters Table 4. Static electrical characteristics Table 5. Dynamic characteristics Figure 1. Conduction losses versus average current Figure 2. Forward voltage drop versus forward current Figure 3. Relative variation of thermal impedance junction ambient versus pulse duration Figure 4. Relative variation of thermal impedance junction ambient versus pulse duration Figure 5. Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) Figure 6. Peak reverse recovery current versus dIF/dt (90% confidence) Figure 7. Reverse recovery time versus dIF/dt (90% confidence) Figure 8. Reverse recovery charges versus dIF/dt (90% confidence) Figure 9. Softness factor versus dIF/dt (typical values) Figure 10. Relative variations of dynamic parameters versus junction temperature Figure 11. Transient peak forward voltage versus dIF/dt (90% confidence) Figure 12. Forward recovery time versus dIF/dt (90% confidence) Figure 13. Junction capacitance versus reverse voltage applied (typical values) Figure 14. Thermal resistance junction to ambient versus copper surface under each lead Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) 2 Package information Table 6. SMA dimensions Figure 16. Footprint (dimensions in mm) Table 7. SMB dimensions Figure 17. Footprint (dimensions in mm) Table 8. DO-41 (plastic) dimensions 3 Ordering information Table 9. Ordering information 4 Revision history Table 10. Document revision history
