Datasheet BAS116 (Nexperia)

BAS116 Low-leakage diode 5 August 2020 Product data sheet 1. General description
Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package.
2. Features and benefits
• Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 us • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. • AEC-Q101 qualified
3. Applications
• Low leakage current applications in surface mounted circuits.
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
IF forward current tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - - 215 mA VRRM repetitive peak reverse Tj = 25 °C - - 85 V voltage VF forward voltage IF = 50 mA; tp ≤ 300 µs; δ ≤ 0.02; - - 1.1 V Tj = 25 °C IR reverse current VR = 75 V; pulsed; Tj = 25 °C - 0.003 5 nA trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; - 0.8 3 µs IR(meas) = 1 mA; Tj = 25 °C
5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 A anode 3 K 2 n.c. not connected A n.c. 3 K cathode 006aaa764 1 2
SOT23
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents