Datasheet J201, SST201 (Vishay) - 3
| Manufacturer | Vishay |
| Description | N-Channel JFETs |
| Pages / Page | 6 / 3 — J/SST201 Series. Vishay Siliconix. Drain Current and Transconductance. … |
| File Format / Size | PDF / 80 Kb |
| Document Language | English |
J/SST201 Series. Vishay Siliconix. Drain Current and Transconductance. vs. Gate-Source Cutoff Voltage. Gate Leakage Current
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Text Version of Document
J/SST201 Series Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current
10 5 10 nA IG @ ID = 500 mA IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V g ID = 100 mA fs 8 f = 1 kHz − 1 nA 4 T Forward T A = 125_C 6 100 pA IGSS @ 125_C 3 ransconductance (mS) gfs ID = 500 mA 4 IDSS 2 10 pA ID = 100 mA − Gate Leakage (A) I G T − Saturation Drain Current (mA) A = 25_C S 2 1 pA 1 IGSS @ 25_C I DS 0 0.1 pA 0 0 −1 −2 −3 −4 −5 0 15 30 VGS(off) − Gate-Source Cutoff Voltage (V) VDG − Drain-Gate Voltage (V)
On-Resistance and Output Conductance Common-Source Forward Transconductance vs. Gate-Source Cutoff Voltage vs. Drain Current
1500 10 2 VGS(off) = −1.5 V VDS = 10 V f = 1 kHz Ω ) 1200 gos 8 gos 1.6 − Output Conductance ( TA = −55_C 900 6 1.2 rDS 25_C ransconductance (mS) 600 4 0.8 mS) − Drain-Source On-Resistance ( 300 2 − Forward T 0.4 125_C (on) rDS @ ID = 100 mA, VGS = 0 V g fs r DS gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz 0 0 0 0 −1 −2 −3 −4 −5 0.01 0.1 1 VGS(off) − Gate-Source Cutoff Voltage (V) ID − Drain Current (mA)
Output Characteristics Output Characteristics
400 2 VGS(off) = −0.7 V VGS(off) = −1.5 V VGS = 0 V 360 1.6 VGS = 0 V mA) −0.1 V 240 1.2 −0.3 V 160 −0.2 V 0.8 − Drain Current ( − Drain Current (mA) −0.6 V I D −0.3 V I D 80 0.4 −0.5 V −0.4 V −1.2 V −0.9 V 0 0 0 4 8 12 16 20 0 4 8 12 16 20 VDS − Drain-Source Voltage (V) VDS − Drain-Source Voltage (V) Document Number: 70233 www.vishay.com S-40393—Rev. G, 15-Mar-04
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TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current
10 5 10 nA IG @ ID = 500 mA IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V g ID = 100 mA fs 8 f = 1 kHz − 1 nA 4 T Forward T A = 125_C 6 100 pA IGSS @ 125_C 3 ransconductance (mS) gfs ID = 500 mA 4 IDSS 2 10 pA ID = 100 mA − Gate Leakage (A) I G T − Saturation Drain Current (mA) A = 25_C S 2 1 pA 1 IGSS @ 25_C I DS 0 0.1 pA 0 0 −1 −2 −3 −4 −5 0 15 30 VGS(off) − Gate-Source Cutoff Voltage (V) VDG − Drain-Gate Voltage (V)
On-Resistance and Output Conductance Common-Source Forward Transconductance vs. Gate-Source Cutoff Voltage vs. Drain Current
1500 10 2 VGS(off) = −1.5 V VDS = 10 V f = 1 kHz Ω ) 1200 gos 8 gos 1.6 − Output Conductance ( TA = −55_C 900 6 1.2 rDS 25_C ransconductance (mS) 600 4 0.8 mS) − Drain-Source On-Resistance ( 300 2 − Forward T 0.4 125_C (on) rDS @ ID = 100 mA, VGS = 0 V g fs r DS gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz 0 0 0 0 −1 −2 −3 −4 −5 0.01 0.1 1 VGS(off) − Gate-Source Cutoff Voltage (V) ID − Drain Current (mA)
Output Characteristics Output Characteristics
400 2 VGS(off) = −0.7 V VGS(off) = −1.5 V VGS = 0 V 360 1.6 VGS = 0 V mA) −0.1 V 240 1.2 −0.3 V 160 −0.2 V 0.8 − Drain Current ( − Drain Current (mA) −0.6 V I D −0.3 V I D 80 0.4 −0.5 V −0.4 V −1.2 V −0.9 V 0 0 0 4 8 12 16 20 0 4 8 12 16 20 VDS − Drain-Source Voltage (V) VDS − Drain-Source Voltage (V) Document Number: 70233 www.vishay.com S-40393—Rev. G, 15-Mar-04
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