Datasheet J201, SST201 (Vishay) - 4

J/SST201 Series Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics Transfer Characteristics
500 2 VGS(off) = −1.5 V VDS = 10 V VGS(off) = −0.7 V VDS = 10 V 400 1.6 TA = −55_C mA) 300 TA = −55_C 1.2 25_C 25_C 200 0.8 − Drain Current ( − Drain Current (mA) I D 125_C I D 100 0.4 125_C 0 0 0 −0.1 −0.2 −0.3 −0.4 −0.5 0 −0.4 −0.8 −1.2 −1.6 −2 VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage
1.5 4 V VGS(off) = −1.5 V V GS(off) = −0.7 V VDS = 10 V DS = 10 V f = 1 kHz f = 1 kHz 1.2 3.2 TA = −55_C 25 2.4 0.9 _C TA = −55_C ransconductance (mS) ransconductance (mS) 25_C 0.6 1.6 125_C − Forward T 0.3 − Forward T 0.8 g fs g fs 125_C 0 0 0 −0.1 −0.2 −0.3 −0.4 −0.5 0 −0.4 −0.8 −1.2 −1.6 −2 VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current
200 2000 gfs RL Ω ) AV + 1 ) R 160 Lgos 1600 Assume VDD = 15 V, VDS = 5 V 10 V VGS(off) = −0.7 V 120 RL + ID 1200 oltage Gain 80 800 − V VGS(off) = −0.7 V A V −1.5 V −1.5 V − Drain-Source On-Resistance ( 40 400 (on) r DS 0 0 0.01 0.1 1 0.01 0.1 1 ID − Drain Current (mA) ID − Drain Current (mA) www.vishay.com Document Number: 70233
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S-40393—Rev. G, 15-Mar-04