Datasheet Si1308EDL (Vishay) - 4
| Manufacturer | Vishay |
| Description | N-Channel 30 V (D-S) MOSFET |
| Pages / Page | 11 / 4 — Si1308EDL. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction … |
| File Format / Size | PDF / 260 Kb |
| Document Language | English |
Si1308EDL. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction Temperature. Source-Drain Diode Forward Voltage
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Si1308EDL
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 1.65 10 I = 1.5 A D ) 1.40 alized ) T = 150 °C rm (A J (No rrent u nce 1.15 1 ta is T = 25 °C s J e ource C -R V = 10 V; 4.5 V S n GS - I S -O 0.90 ) n (o S DR 0.65 0.1 - 50 - 25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 T - Junction Temperature (°C) V - Source-to-Drain Voltage (V) J SD
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
0.25 1.3 I = 1.5 A I = 250 μA D D 1.15 ) 0.2 tance (Ω T = 125 °C ) 1 is J s (V e ) 0.15 (th -R n GSV 0.85 -O T = 25 °C ) J n (o S D 0.1 R 0.7 0.05 0.55 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 V - Gate-to-Source Voltage (V) GS T - Temperature (°C) J
On-Resistance vs. Gate-to-Source Voltage Threshold Voltage
10 10 Limited by RDS(on)* 8 1 100 μs ) (A 1 ms 6 rrent u C 0.1 10 ms n Power (W) rai 4 D - 100 ms I D DC, 10 s, 1 s 0.01 2 T = 25 °C A BVDSS Limited 0 0.001 0.1 1 10 100 0.001 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) Time (s) DS * V > minimum V at which R is specified GS GS DS(on)
Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient
S14-1997-Rev. C, 06-Oct-14
4
Document Number: 63399 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 1.65 10 I = 1.5 A D ) 1.40 alized ) T = 150 °C rm (A J (No rrent u nce 1.15 1 ta is T = 25 °C s J e ource C -R V = 10 V; 4.5 V S n GS - I S -O 0.90 ) n (o S DR 0.65 0.1 - 50 - 25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 T - Junction Temperature (°C) V - Source-to-Drain Voltage (V) J SD
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
0.25 1.3 I = 1.5 A I = 250 μA D D 1.15 ) 0.2 tance (Ω T = 125 °C ) 1 is J s (V e ) 0.15 (th -R n GSV 0.85 -O T = 25 °C ) J n (o S D 0.1 R 0.7 0.05 0.55 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 V - Gate-to-Source Voltage (V) GS T - Temperature (°C) J
On-Resistance vs. Gate-to-Source Voltage Threshold Voltage
10 10 Limited by RDS(on)* 8 1 100 μs ) (A 1 ms 6 rrent u C 0.1 10 ms n Power (W) rai 4 D - 100 ms I D DC, 10 s, 1 s 0.01 2 T = 25 °C A BVDSS Limited 0 0.001 0.1 1 10 100 0.001 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) Time (s) DS * V > minimum V at which R is specified GS GS DS(on)
Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient
S14-1997-Rev. C, 06-Oct-14
4
Document Number: 63399 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
