Datasheet IRFD110 (Vishay) - 2
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 9 / 2 — IRFD110. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| File Format / Size | PDF / 154 Kb |
| Document Language | English |
IRFD110. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Static
Model Line for this Datasheet
Text Version of Document
IRFD110
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 120 °C/W
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 0.60 Ab - - 0.54 Ω Forward Transconductance gfs VDS = 50 V, ID = 0.60 Ab 0.80 - - S
Dynamic
Input Capacitance Ciss - 180 - VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 81 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 15 - Total Gate Charge Qg - - 8.3 I Gate-Source Charge Qgs V D = 5.6 A, VDS = 80 V, GS = 10 V - - 2.3 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 3.8 Turn-On Delay Time td(on) - 6.9 - Rise Time tr - 16 - VDD = 50 V, ID = 5.6 A, ns Turn-Off Delay Time t R d(off) g = 24 Ω, RD = 8.4 Ω, see fig. 10b - 15 - Fall Time tf - 9.4 - Between lead, D Internal Drain Inductance LD - 4.0 - 6 mm (0.25") from package and center of nH G die contact Internal Source Inductance LS - 6.0 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 1.0 showing the A integral reverse G Pulsed Diode Forward Currenta ISM p - n junction diode - - 8.0 S Body Diode Voltage VSD TJ = 25 °C, IS = 1.0 A, VGS = 0 Vb - - 2.5 V Body Diode Reverse Recovery Time trr - 100 200 ns TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 0.44 0.88 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0885-Rev. D, 30-Aug-2021
2
Document Number: 91127 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 120 °C/W
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 0.60 Ab - - 0.54 Ω Forward Transconductance gfs VDS = 50 V, ID = 0.60 Ab 0.80 - - S
Dynamic
Input Capacitance Ciss - 180 - VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 81 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 15 - Total Gate Charge Qg - - 8.3 I Gate-Source Charge Qgs V D = 5.6 A, VDS = 80 V, GS = 10 V - - 2.3 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 3.8 Turn-On Delay Time td(on) - 6.9 - Rise Time tr - 16 - VDD = 50 V, ID = 5.6 A, ns Turn-Off Delay Time t R d(off) g = 24 Ω, RD = 8.4 Ω, see fig. 10b - 15 - Fall Time tf - 9.4 - Between lead, D Internal Drain Inductance LD - 4.0 - 6 mm (0.25") from package and center of nH G die contact Internal Source Inductance LS - 6.0 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 1.0 showing the A integral reverse G Pulsed Diode Forward Currenta ISM p - n junction diode - - 8.0 S Body Diode Voltage VSD TJ = 25 °C, IS = 1.0 A, VGS = 0 Vb - - 2.5 V Body Diode Reverse Recovery Time trr - 100 200 ns TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 0.44 0.88 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0885-Rev. D, 30-Aug-2021
2
Document Number: 91127 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
