Datasheet TPD4163K (Toshiba) - 8
| Manufacturer | Toshiba |
| Description | High Voltage Monolithic Silicon Power IC |
| Pages / Page | 13 / 8 — 8. Absolute Maximum Ratings. Table 8.1 Absolute Maximum Ratings. (Ta = … |
| File Format / Size | PDF / 463 Kb |
| Document Language | English |
8. Absolute Maximum Ratings. Table 8.1 Absolute Maximum Ratings. (Ta = 25°C unless otherwise specified)
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TPD4163K
8. Absolute Maximum Ratings Table 8.1 Absolute Maximum Ratings (Ta = 25°C unless otherwise specified)
Characteristics Symbol Rating Unit VBB 600 V Power supply voltage VCC 20 V Output current (DC) Iout 1 A Output current (pulse 1ms) I outp 2 A VBSX 600 V Bootstrap pin voltage (Note1) VBSX-X - 0.5 to 6 V Input voltage (Note2) VIN - 0.5 to 6 V VREG current IREG 50 mA DIAG voltage VDIAG 20 V DIAG current IDIAG 20 mA SD pin voltage VSD - 0.5 to VREG + 0.5 V RS pin voltage VRS - 0.5 to VREG + 0.5 V IS pin voltage (Note3) VIS ± 0.7 V Power dissipation PC(IGBT) 27 W ( IGBT 1-phase (Tc = 25°C) Power dissipation PC(FRD) 9 W ( FRD 1-phase (Tc = 25°C) Operating junction temperature Tjopr - 40 to 135 °C Junction temperature Tj 150 °C Storage temperature Tstg - 55 to 150 °C Note1: VBSX-X: BSU-U, BSV-V, BSW-W Note2: VIN: HU, HV, HW, LU, LV, LW Note3: Except for the peak voltage occurred in switching outputs including within the delay time of over current protection. The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not be exceeded during operation, even for an instant. If any of these rating would be exceeded during operation, the device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage, and/or degradation to any other equipment. Applications using the device should be designed such that each maximum rating will never be exceeded in any operating conditions. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods“) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). © 20 23 8 2023-06-23 Toshiba Electronic Devices & Storage Corporation Rev.1.0
8. Absolute Maximum Ratings Table 8.1 Absolute Maximum Ratings (Ta = 25°C unless otherwise specified)
Characteristics Symbol Rating Unit VBB 600 V Power supply voltage VCC 20 V Output current (DC) Iout 1 A Output current (pulse 1ms) I outp 2 A VBSX 600 V Bootstrap pin voltage (Note1) VBSX-X - 0.5 to 6 V Input voltage (Note2) VIN - 0.5 to 6 V VREG current IREG 50 mA DIAG voltage VDIAG 20 V DIAG current IDIAG 20 mA SD pin voltage VSD - 0.5 to VREG + 0.5 V RS pin voltage VRS - 0.5 to VREG + 0.5 V IS pin voltage (Note3) VIS ± 0.7 V Power dissipation PC(IGBT) 27 W ( IGBT 1-phase (Tc = 25°C) Power dissipation PC(FRD) 9 W ( FRD 1-phase (Tc = 25°C) Operating junction temperature Tjopr - 40 to 135 °C Junction temperature Tj 150 °C Storage temperature Tstg - 55 to 150 °C Note1: VBSX-X: BSU-U, BSV-V, BSW-W Note2: VIN: HU, HV, HW, LU, LV, LW Note3: Except for the peak voltage occurred in switching outputs including within the delay time of over current protection. The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not be exceeded during operation, even for an instant. If any of these rating would be exceeded during operation, the device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage, and/or degradation to any other equipment. Applications using the device should be designed such that each maximum rating will never be exceeded in any operating conditions. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods“) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). © 20 23 8 2023-06-23 Toshiba Electronic Devices & Storage Corporation Rev.1.0
