Datasheet EPC2361 (Efficient Power Conversion) - 4

eGaN® FET DATASHEET
EPC2361
Figure 10: Normalized Threshold Voltage vs. Temperature Figure 11: Safe Operating Area
1000 1.4 1.3 ID = 15 mA 100 Limited by RDS(on) 1.2 1.1 1.0 10 0.9
– Drain Current (A)
Pulse Width 0.8
I D
1 ms 1 100 ms
Normalized Threshold Voltage
100 µs 0.7 10 ms 1 ms 10 µs 0.6 100 µs 0.1 0 25 50 75 100 125 150 0.1 1 10 100 1000
TJ – Junction Temperature (°C) VDS – Drain-Source Voltage (V) T = Max Rated, T = +25°C, Single Pulse J C Figure 12: Transient Thermal Response Curves Junction-to-Board
1
Duty Factors: 0.5 0.2 0.1
0.1
0.05 Thermal Impedance 0.02 T ed 0.01 PDM tp
0.01
ormaliz Single Pulse , N Notes: ZθJB Duty Factor = tp/T Peak TJ = PDM x ZθJB x RθJB + TB
0.00110-5 10-4 10-3 10-2 10-1 1 10
tp - Rectangular Pulse Duration (s) Junction-to-Case
1
Duty Factors: 0.5 0.2 0.1
0.1
0.05 0.02 Thermal Impedance 0.01 T ed P Single Pulse DM tp
0.01
ormaliz , N Notes: ZθC Duty Factor = tp/T Peak TJ = PDM x ZθJC x RθJC + TC
0.001 10-5 10-6 10-4 10-3 10-2 10-1 1
tp - Rectangular Pulse Duration (s)
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