Datasheet MB2M, MB4M, MB6M (Vishay) - 2
| Manufacturer | Vishay |
| Description | Miniature Glass Passivated Single-Phase Bridge Rectifiers |
| Pages / Page | 4 / 2 — MB2M, MB4M, MB6M. ELECTRICAL CHARACTERISTICS. PARAMETER. TEST CONDITIONS. … |
| File Format / Size | PDF / 86 Kb |
| Document Language | English |
MB2M, MB4M, MB6M. ELECTRICAL CHARACTERISTICS. PARAMETER. TEST CONDITIONS. SYMBOL MB2M. MB4M. MB6M. UNIT. THERMAL CHARACTERISTICS. Notes
Model Line for this Datasheet
Text Version of Document
MB2M, MB4M, MB6M
www.vishay.com Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MB2M MB4M MB6M UNIT
Maximum instantaneous forward I voltage per diode F = 0.4 A VF 1.0 V Maximum DC reverse current at rated DC blocking TA = 25 °C 5.0 I μA voltage per diode R TA = 125 °C 100 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF
THERMAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MB2M MB4M MB6M UNIT
RθJA (1) 85 Typical thermal resistance R (2) 70 °C/W θJA RθJL (1) 20
Notes
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
ORDERING INFORMATION
(Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MB2M-E3/45 0.22 45 100 Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted) 0.8 35 T = 40 °C Aluminum Substrate A Single Half Sine-Wave 0.7 30 rrent (A) u 0.6 rrent (A) 25 u 0.5 20 f = 50 Hz f = 60 Hz rge C 0.4 Glass u Epoxy 15 ard Rectified C 0.3 PCB ard S wro rw o 10 0.2 F k a age F 0.1 Resistive or Inductive Load 5 er Pe 1.0 Cycle v A 0 0 0 20 40 60 80 100 120 140 160 1 10 100 Ambient Temperature (°C) Number of Cycles Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 15-Jul-2020
2
Document Number: 88660 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MB2M MB4M MB6M UNIT
Maximum instantaneous forward I voltage per diode F = 0.4 A VF 1.0 V Maximum DC reverse current at rated DC blocking TA = 25 °C 5.0 I μA voltage per diode R TA = 125 °C 100 Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF
THERMAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MB2M MB4M MB6M UNIT
RθJA (1) 85 Typical thermal resistance R (2) 70 °C/W θJA RθJL (1) 20
Notes
(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads (2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
ORDERING INFORMATION
(Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MB2M-E3/45 0.22 45 100 Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted) 0.8 35 T = 40 °C Aluminum Substrate A Single Half Sine-Wave 0.7 30 rrent (A) u 0.6 rrent (A) 25 u 0.5 20 f = 50 Hz f = 60 Hz rge C 0.4 Glass u Epoxy 15 ard Rectified C 0.3 PCB ard S wro rw o 10 0.2 F k a age F 0.1 Resistive or Inductive Load 5 er Pe 1.0 Cycle v A 0 0 0 20 40 60 80 100 120 140 160 1 10 100 Ambient Temperature (°C) Number of Cycles Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 15-Jul-2020
2
Document Number: 88660 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
