Preliminary Datasheet IRL3502 (International Rectifier)

ManufacturerInternational Rectifier
DescriptionHEXFET Power MOSFET
Pages / Page8 / 1 — PRELIMINARY. Description. Absolute Maximum Ratings. Parameter. Max. …
File Format / SizePDF / 84 Kb
Document LanguageEnglish

PRELIMINARY. Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ

Preliminary Datasheet IRL3502 International Rectifier

Model Line for this Datasheet

Text Version of Document

PD 9.1698A IRL3502
PRELIMINARY
HEXFET® Power MOSFET l Advanced Process Technology D l Optimized for 4.5V-7.0V Gate Drive VDSS = 20V l Ideal for CPU Core DC-DC Converters l Fast Switching RDS(on) = 0.007Ω G ID = 110A…
Description
S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 110… ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0V 67 A IDM Pulsed Drain Current  420 PD @TC = 25°C Power Dissipation 140 W Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 10 V VGSM Gate-to-Source Voltage 14 V (Start Up Transient, tp = 100µs) EAS Single Pulse Avalanche Energy‚ 390 mJ IAR Avalanche Current 64 A EAR Repetitive Avalanche Energy 14 mJ dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.89 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 11/17/97