Preliminary Datasheet IRL3502 (International Rectifier) - 5
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET |
| Pages / Page | 8 / 5 — Fig 9. Fig 10. Fig 11 |
| File Format / Size | PDF / 84 Kb |
| Document Language | English |
Fig 9. Fig 10. Fig 11
Model Line for this Datasheet
Text Version of Document
IRL3502 120 800 ID LIMITED BY PACKAGE TOP 29A 100 40A BOTTOM 64A 600 80 60 400 40 I , Drain Current (A) D 200 20 AS 0 E , Single Pulse Avalanche Energy (mJ) 0 25 50 75 100 125 150 25 50 75 100 125 150 T , Case Temperature ( C) ° C Starting T , Junction Temperature( C) ° J
Fig 9.
Maximum Drain Current Vs. Case Temperature
Fig 10.
Maximum Avalanche Energy Vs. Drain Current 1 D = 0.50 thJC (Z ) 0.20 0.10 0.1 0.05 PDM t 0.02 1 SINGLE PULSE 0.01 (THERMAL RESPONSE) t2 Thermal Response Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs. Case Temperature
Fig 10.
Maximum Avalanche Energy Vs. Drain Current 1 D = 0.50 thJC (Z ) 0.20 0.10 0.1 0.05 PDM t 0.02 1 SINGLE PULSE 0.01 (THERMAL RESPONSE) t2 Thermal Response Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
