Datasheet SB3H90, SB3H100 (Vishay)
| Manufacturer | Vishay |
| Description | High Voltage Schottky Plastic Rectifier |
| Pages / Page | 4 / 1 — SB3H90, SB3H100. High Voltage Schottky Plastic Rectifier. FEATURES. … |
| File Format / Size | PDF / 76 Kb |
| Document Language | English |
SB3H90, SB3H100. High Voltage Schottky Plastic Rectifier. FEATURES. DO-201AD. TYPICAL APPLICATIONS. PRIMARY CHARACTERISTICS
Model Line for this Datasheet
Text Version of Document
SB3H90, SB3H100
www.vishay.com Vishay General Semiconductor
High Voltage Schottky Plastic Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop • Low leakage current • High forward surge capabilitmy • High frequency operation
DO-201AD
• Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS
For use in middle voltage high frequency inverters, I freewheeling, DC/DC converters, and polarity protection F(AV) 3.0 A applications. VRRM 90 V, 100 V IFSM 100 A
MECHANICAL DATA
VF 0.65 V
Case:
DO-201AD IR 20 μA Molding compound meets UL 94 V-0 flammability rating TJ max. 175 °C Base P/N-E3 - RoHS-compliant, commercial grade Package DO-201AD
Terminals:
Matte tin plated leads, solderable per Diode variations Single J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SB3H90 SB3H100 UNIT
Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum working reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TL = 90 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave I superimposed on rated load FSM 100 A Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 A Critical rate of rise of reverse voltage dV/dt 10 000 V/μs Storage temperature range TSTG - 55 to + 175 °C Maximum operating junction temperature TJ 175 °C Revision: 13-Aug-13
1
Document Number: 88720 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay General Semiconductor
High Voltage Schottky Plastic Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop • Low leakage current • High forward surge capabilitmy • High frequency operation
DO-201AD
• Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS
For use in middle voltage high frequency inverters, I freewheeling, DC/DC converters, and polarity protection F(AV) 3.0 A applications. VRRM 90 V, 100 V IFSM 100 A
MECHANICAL DATA
VF 0.65 V
Case:
DO-201AD IR 20 μA Molding compound meets UL 94 V-0 flammability rating TJ max. 175 °C Base P/N-E3 - RoHS-compliant, commercial grade Package DO-201AD
Terminals:
Matte tin plated leads, solderable per Diode variations Single J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SB3H90 SB3H100 UNIT
Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum working reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TL = 90 °C IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave I superimposed on rated load FSM 100 A Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 A Critical rate of rise of reverse voltage dV/dt 10 000 V/μs Storage temperature range TSTG - 55 to + 175 °C Maximum operating junction temperature TJ 175 °C Revision: 13-Aug-13
1
Document Number: 88720 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
