Datasheet JCS10N60T (JiLin Sino-Microelectronics) - 4
| Manufacturer | JiLin Sino-Microelectronics |
| Description | N-Channel MOSFET |
| Pages / Page | 10 / 4 — ELECTRICAL CHARACTERISTICS. Switching Characteristics. Drain-Source Diode … |
| File Format / Size | PDF / 1.1 Mb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. Switching Characteristics. Drain-Source Diode Characteristics and Maximum Ratings
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JCS10N60T 电特性
ELECTRICAL CHARACTERISTICS
开关特性
Switching Characteristics
延迟时间 Turn-On delay time td(on) - VDD=300V,ID=9.5A,RG=25Ω 68 91 ns 上升时间 Turn-On rise time t （note 4，5） r - 109 150 ns 延迟时间 Turn-Off delay time td(off) - 214 300 ns 下降时间 Turn-Off Fall time tf - 85 165 ns 栅极电荷总量 Total Gate Charge Qg - VDS =480V , 34 45 nC 栅－源电荷 Gate-Source charge Q I gs - D=9.5A 6.9 - nC 栅－漏电荷 Gate-Drain charge Q VGS =10V （note 4，5） gd - 12 - nC 漏－源二极管特性及最大额定值
Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流 Maximum Continuous Drain IS - - 9.5 A -Source Diode Forward Current 正向最大脉冲电流 Maximum Pulsed Drain-Source ISM - - 38 A Diode Forward Current 正向压降 Drain-Source Diode Forward VSD VGS=0V, IS=9.5A - 1.05 1.4 V Voltage 反向恢复时间 t Reverse recovery time rr - 425 - ns VGS=0V, IS=9.5A 反向恢复电荷 dIF/dt=100A/μs (note 4) Q - 4.31 - μC Reverse recovery charge rr 热特性
THERMAL CHARACTERISTIC
最大 项 目 符 号 单 位
Max Parameter Symbol Unit JCS10N60CT JCS10N60FT
结到管壳的热阻 Rth(j-c) 0.7 2.5 ℃/W Thermal Resistance, Junction to Case 结到环境的热阻 Rth(j-A) 62.5 62.5 ℃/W Thermal Resistance, Junction to Ambient 注释： Notes: 1：脉冲宽度由最高结温限制 1：Pulse width limited by maximum junction 2：L=14.5mH, I temperature AS=9.5A, VDD=50V, RG=25 Ω,起始 结温 T 2：L=14.5mH, I J=25℃ AS=9.5A, VDD=50V, RG=25 Ω,Starting 3：I T SD ≤9.5A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温 J=25℃ T 3：I J=25℃ SD ≤9.5A,di/dt ≤300A/μs,VDD≤BVDSS, Starting 4：脉冲测试：脉冲宽度≤300μs,占空比≤2％ TJ=25℃ 5：基本与工作温度无关 4：Pulse Test：Pulse Width ≤300μs,Duty Cycle≤2％ 5：Essentially independent of operating temperature 版本：201112D 4/10
JCS10N60T 电特性
ELECTRICAL CHARACTERISTICS
开关特性
Switching Characteristics
延迟时间 Turn-On delay time td(on) - VDD=300V,ID=9.5A,RG=25Ω 68 91 ns 上升时间 Turn-On rise time t （note 4，5） r - 109 150 ns 延迟时间 Turn-Off delay time td(off) - 214 300 ns 下降时间 Turn-Off Fall time tf - 85 165 ns 栅极电荷总量 Total Gate Charge Qg - VDS =480V , 34 45 nC 栅－源电荷 Gate-Source charge Q I gs - D=9.5A 6.9 - nC 栅－漏电荷 Gate-Drain charge Q VGS =10V （note 4，5） gd - 12 - nC 漏－源二极管特性及最大额定值
Drain-Source Diode Characteristics and Maximum Ratings
正向最大连续电流 Maximum Continuous Drain IS - - 9.5 A -Source Diode Forward Current 正向最大脉冲电流 Maximum Pulsed Drain-Source ISM - - 38 A Diode Forward Current 正向压降 Drain-Source Diode Forward VSD VGS=0V, IS=9.5A - 1.05 1.4 V Voltage 反向恢复时间 t Reverse recovery time rr - 425 - ns VGS=0V, IS=9.5A 反向恢复电荷 dIF/dt=100A/μs (note 4) Q - 4.31 - μC Reverse recovery charge rr 热特性
THERMAL CHARACTERISTIC
最大 项 目 符 号 单 位
Max Parameter Symbol Unit JCS10N60CT JCS10N60FT
结到管壳的热阻 Rth(j-c) 0.7 2.5 ℃/W Thermal Resistance, Junction to Case 结到环境的热阻 Rth(j-A) 62.5 62.5 ℃/W Thermal Resistance, Junction to Ambient 注释： Notes: 1：脉冲宽度由最高结温限制 1：Pulse width limited by maximum junction 2：L=14.5mH, I temperature AS=9.5A, VDD=50V, RG=25 Ω,起始 结温 T 2：L=14.5mH, I J=25℃ AS=9.5A, VDD=50V, RG=25 Ω,Starting 3：I T SD ≤9.5A,di/dt ≤300A/μs,VDD≤BVDSS,起始结温 J=25℃ T 3：I J=25℃ SD ≤9.5A,di/dt ≤300A/μs,VDD≤BVDSS, Starting 4：脉冲测试：脉冲宽度≤300μs,占空比≤2％ TJ=25℃ 5：基本与工作温度无关 4：Pulse Test：Pulse Width ≤300μs,Duty Cycle≤2％ 5：Essentially independent of operating temperature 版本：201112D 4/10
