Datasheet IXRFD630 (IXYS)

30 A Low-Side RF MOSFET Driver
IXRFD630
Features Description • High Peak Output Current The IXRFD630 is a CMOS high- • Low Output Impedance speed, high-current gate driver • Low Quiescent Supply Current specifically designed to drive • Low Propagation Delay MOSFETs in Class D and E HF • High Capacitive Load Drive Capability RF applications as well as other • Wide Operating Voltage Range applications requiring ultrafast rise and fall times or short mini- Applications mum pulse widths. The IXRFD630 can source and sink 30 A of peak current while producing voltage rise and fall times of less than 4 ns and minimum pulse • RF MOSFET Driver widths of 8 ns. The input of the driver is compatible • Class D and E RF Generators with TTL or CMOS and is fully immune to latch up over • Multi-MHz Switch Mode Supplies the entire operating range. Designed with small inter- • Pulse Transformer Driver nal delays, cross conduction or current shoot-through • Pulse Laser Diode Driver is virtually eliminated. The features and wide safety • Pulse Generator margin in operating voltage and power make the IXRFD630 unmatched in performance and value. The surface mount IXRFD630 is packaged in a low- inductance RF package incorporating advanced layout techniques to minimize stray lead inductances for opti- mum switching performance. Fig. 1- Block Diagram and Truth Table IN OUT 0 0 1 1 1