Datasheet BCX42 (Infineon) - 2
| Manufacturer | Infineon |
| Description | NPN Silicon AF and Switching Transistor |
| Pages / Page | 7 / 2 — BCX42. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. … |
| File Format / Size | PDF / 539 Kb |
| Document Language | English |
BCX42. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. DC Characteristics. AC Characteristics
Model Line for this Datasheet
Text Version of Document
BCX42 Electrical Characteristics
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 125 - - V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 125 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO µA VCB = 100 V, IE = 0 - - 0.1 VCB = 100 V, IE = 0 , TA = 150 °C - - 20 Collector-emitter cutoff current ICEO VCE = 100 V, TA = 85 °C - - 10 VCE = 100 V, TA = 125 °C - - 75 Emitter-base cutoff current IEBO - - 100 nA VEB = 4 V, IC = 0 DC current gain1) hFE - IC = 100 µA, VCE = 1 V 25 - - IC = 100 mA, VCE = 1 V 63 - - IC = 200 mA, VCE = 1 V 40 - - Collector-emitter saturation voltage1) VCEsat - - 0.9 V IC = 300 mA, IB = 30 mA Base emitter saturation voltage1) VBEsat - - 1.4 IC = 300 mA, IB = 30 mA
AC Characteristics
Transition frequency fT - 150 - MHz IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance Ccb - 12 - pF VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2011-10-04
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 125 - - V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 125 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO µA VCB = 100 V, IE = 0 - - 0.1 VCB = 100 V, IE = 0 , TA = 150 °C - - 20 Collector-emitter cutoff current ICEO VCE = 100 V, TA = 85 °C - - 10 VCE = 100 V, TA = 125 °C - - 75 Emitter-base cutoff current IEBO - - 100 nA VEB = 4 V, IC = 0 DC current gain1) hFE - IC = 100 µA, VCE = 1 V 25 - - IC = 100 mA, VCE = 1 V 63 - - IC = 200 mA, VCE = 1 V 40 - - Collector-emitter saturation voltage1) VCEsat - - 0.9 V IC = 300 mA, IB = 30 mA Base emitter saturation voltage1) VBEsat - - 1.4 IC = 300 mA, IB = 30 mA
AC Characteristics
Transition frequency fT - 150 - MHz IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance Ccb - 12 - pF VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2011-10-04
