Datasheet LM4040 (Diodes) - 4
| Manufacturer | Diodes |
| Description | PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE |
| Pages / Page | 16 / 4 — LM4040. Electrical Characteristics. LM4040-41. Conditions. Symbol. … |
| File Format / Size | PDF / 1.6 Mb |
| Document Language | English |
LM4040. Electrical Characteristics. LM4040-41. Conditions. Symbol. Parameter. Typ. B Limits C Limits D Limits. Units. LM4040-50
Model Line for this Datasheet
- LM4040B25FTA LM4040B25QFTA LM4040B30FTA LM4040B30QFTA LM4040B33FTA LM4040B33QFTA LM4040B41FTA LM4040B41QFTA LM4040B50FTA LM4040C25FTA LM4040C25QFTA LM4040C30FTA LM4040C33FTA LM4040C33QFTA LM4040C41FTA LM4040C41QFTA LM4040C50FTA LM4040D25FTA LM4040D25QFTA LM4040D30FTA LM4040D30QFTA LM4040D33FTA LM4040D33QFTA LM4040D41FTA LM4040D41QFTA LM4040D50FTA LM4040D50QFTA
Text Version of Document
LM4040 Electrical Characteristics
(cont.) (@TA = +25°C, unless otherwise specified.)
LM4040-41 Conditions Symbol Parameter Typ B Limits C Limits D Limits Units TA
Reverse Breakdown Voltage IR = 100µA +25°C 4.096 — — — V +25°C ±8.2 ±20 ±41 VREF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±35 ±47 ±81 mV -40 to +125°C ±49 ±60 ±102 +25°C 50 83 83 83 IRMIN Minimum Operating Current — -40 to +85°C 88 88 88 µA — -40 to +125°C 88 88 88 IR = 10mA ±30 — — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±20 ±100 ±100 ±150 ppm/°C IR = 100µA ±20 — — — — +25°C 0.5 0.9 0.9 1.2 IRMIN IR -40 to +85°C 1.2 1.2 1.5 < 1mA — -40 to +125°C 1.2 1.2 1.5 ΔVR/ΔIR Reverse Breakdown Change With Current mV +25°C 3 7 7 9 1mA < IR -40 to +85°C 10 10 13 < 15mA — -40 to +125°C 10 10 13 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz, 0.5 1 1 1.3 Ω IAC = 0.1IR en Noise Voltage IR = 100µA, 10Hz < f < 10kHz 64 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to = +125°C 0.08 80 %
Electrical Characteristics
(cont.) (Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-50 Conditions Typ LM4040 LM4040 LM4040 Symbol Parameter B Limits C Limits D Limits Units
—
TA
Reverse Breakdown Voltage IR = 100µA +25°C 5.0 — — — V V +25°C ±10 ±25 ±50 REF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±43 ±58 ±99 mV -40 to +125°C ±60 ±75 ±125 +25°C 54 74 74 79 IRMIN Minimum Operating Current — -40 to +85°C µA — 80 80 85 -40 to +125°C 83 83 88 IR = 10mA ±30 — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±20 ±100 ±100 ±150 ppm/°C IR = 100µA ±20 — — — +25°C 0.5 1.0 1.0 1.3 IRMIN ≤ IR ≤ 1mA -40 to +85°C — 1.4 1.4 1.8 -40 to +125°C 1.4 1.4 1.8 ΔVR/ΔIR Reverse Breakdown Change with Current mV +25°C 3.5 8.0 8.0 10.0 1mA ≤ IR ≤ 15mA -40 to +85°C — 12.0 12.0 15.0 -40 to +125°C 12.0 12.0 15.0 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz 0.5 1.1 1.1 1.5 Ω IAC = 0.1IR en Noise Voltage IR = 100µA 10Hz < f < 10kHz 80 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +125°C 0.08 — — — % LM4040 4 of 16 August 2019 Document number: DS33195 Rev. 8 - 2
www.diodes.com
© Diodes Incorporated Document Outline Printed Circuit Board Layout Considerations
(cont.) (@TA = +25°C, unless otherwise specified.)
LM4040-41 Conditions Symbol Parameter Typ B Limits C Limits D Limits Units TA
Reverse Breakdown Voltage IR = 100µA +25°C 4.096 — — — V +25°C ±8.2 ±20 ±41 VREF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±35 ±47 ±81 mV -40 to +125°C ±49 ±60 ±102 +25°C 50 83 83 83 IRMIN Minimum Operating Current — -40 to +85°C 88 88 88 µA — -40 to +125°C 88 88 88 IR = 10mA ±30 — — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±20 ±100 ±100 ±150 ppm/°C IR = 100µA ±20 — — — — +25°C 0.5 0.9 0.9 1.2 IRMIN IR -40 to +85°C 1.2 1.2 1.5 < 1mA — -40 to +125°C 1.2 1.2 1.5 ΔVR/ΔIR Reverse Breakdown Change With Current mV +25°C 3 7 7 9 1mA < IR -40 to +85°C 10 10 13 < 15mA — -40 to +125°C 10 10 13 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz, 0.5 1 1 1.3 Ω IAC = 0.1IR en Noise Voltage IR = 100µA, 10Hz < f < 10kHz 64 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to = +125°C 0.08 80 %
Electrical Characteristics
(cont.) (Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-50 Conditions Typ LM4040 LM4040 LM4040 Symbol Parameter B Limits C Limits D Limits Units
—
TA
Reverse Breakdown Voltage IR = 100µA +25°C 5.0 — — — V V +25°C ±10 ±25 ±50 REF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±43 ±58 ±99 mV -40 to +125°C ±60 ±75 ±125 +25°C 54 74 74 79 IRMIN Minimum Operating Current — -40 to +85°C µA — 80 80 85 -40 to +125°C 83 83 88 IR = 10mA ±30 — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±20 ±100 ±100 ±150 ppm/°C IR = 100µA ±20 — — — +25°C 0.5 1.0 1.0 1.3 IRMIN ≤ IR ≤ 1mA -40 to +85°C — 1.4 1.4 1.8 -40 to +125°C 1.4 1.4 1.8 ΔVR/ΔIR Reverse Breakdown Change with Current mV +25°C 3.5 8.0 8.0 10.0 1mA ≤ IR ≤ 15mA -40 to +85°C — 12.0 12.0 15.0 -40 to +125°C 12.0 12.0 15.0 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz 0.5 1.1 1.1 1.5 Ω IAC = 0.1IR en Noise Voltage IR = 100µA 10Hz < f < 10kHz 80 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +125°C 0.08 — — — % LM4040 4 of 16 August 2019 Document number: DS33195 Rev. 8 - 2
www.diodes.com
© Diodes Incorporated Document Outline Printed Circuit Board Layout Considerations
