Datasheet BTA206X-800ET (WeEn Semiconductors) - 6
| Manufacturer | WeEn Semiconductors |
| Description | 3Q Hi-Com Triac |
| Pages / Page | 12 / 6 — WeEn Semiconductors. BTA206X-800ET. 3Q Hi-Com Triac. 11. Characteristics … |
| File Format / Size | PDF / 592 Kb |
| Document Language | English |
WeEn Semiconductors. BTA206X-800ET. 3Q Hi-Com Triac. 11. Characteristics Table 8. Characteristics. Symbol Parameter. Conditions
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Text Version of Document
WeEn Semiconductors BTA206X-800ET 3Q Hi-Com Triac 11. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - - 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; - - 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; - - 10 mA Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; - - 25 mA Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; - - 30 mA Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; - - 25 mA Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 15 mA VT on-state voltage IT = 7 A; Tj = 25 °C; Fig. 10 - 1.3 1.6 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C - 0.8 1 V Fig. 11 VD = 400V; IT = 0.1 A; Tj = 150 °C 0.25 - - V ID off-state current VD = 800 V; Tj = 150 °C - 0.4 2 mA
Dynamic characteristics
dVD/dt rate of rise of off-state VDM = 536V; Tj = 150 °C; (VDM = 67% 50 - - V/μs voltage of VDRM); exponential waveform; gate open circuit dIcom/dt rate of change of VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; 1 - - A/ms commutating current dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; 2 - - A/ms dVcom/dt = 10 V/μs; gate open circuit VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; 5 - - A/ms dVcom/dt = 1 V/μs; gate open circuit BTA206X-800ET All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2023. All rights reserved
Product data sheet 28 August 2023 6 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Isolation characteristics 11. Characteristics 12. Package outline 13. Legal information 14. Contents
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - - 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; - - 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; - - 10 mA Tj = 25 °C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; - - 25 mA Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; - - 30 mA Tj = 25 °C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; - - 25 mA Tj = 25 °C; Fig. 8 IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 15 mA VT on-state voltage IT = 7 A; Tj = 25 °C; Fig. 10 - 1.3 1.6 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C - 0.8 1 V Fig. 11 VD = 400V; IT = 0.1 A; Tj = 150 °C 0.25 - - V ID off-state current VD = 800 V; Tj = 150 °C - 0.4 2 mA
Dynamic characteristics
dVD/dt rate of rise of off-state VDM = 536V; Tj = 150 °C; (VDM = 67% 50 - - V/μs voltage of VDRM); exponential waveform; gate open circuit dIcom/dt rate of change of VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; 1 - - A/ms commutating current dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; 2 - - A/ms dVcom/dt = 10 V/μs; gate open circuit VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; 5 - - A/ms dVcom/dt = 1 V/μs; gate open circuit BTA206X-800ET All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2023. All rights reserved
Product data sheet 28 August 2023 6 / 12
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Isolation characteristics 11. Characteristics 12. Package outline 13. Legal information 14. Contents
