Datasheet BAS40 (Taiwan Semiconductor)

BAS40 / -04 / -05 / -06 Taiwan Semiconductor 200mA, Low VF SMD Schottky Barrier Diode FEATURES KEY PARAMETERS ● Designed for mounting on small surface PARAMETER VALUE UNIT ● Low Capacitance IF(AV) 200 mA ● Low forward voltage drop V ● Moisture sensitivity level: level 1, per J-STD-020 RRM 40 V ● RoHS Compliant IFSM 0.6 A ● Halogen-free according to IEC 61249-2-21 VF at IF=40mA 1 V T J Max. 125 °C Package SOT-23 APPLICATIONS ● Adapters ● For switching power supply ● Low stored charge ● Inverter MECHANICAL DATA ● Case: SOT-23 ● Molding compound: UL flammability classification rating 94V-0 ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Weight: 8 mg (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT BAS40 43 BAS40-04 44 Marking code on the device BAS40-05 45 BAS40-06 46 Repetitive peak reverse voltage VRRM 40 V Forward current IF(AV) 200 mA Non-repetitive peak forward surge current @ t = 8.3ms IFSM 0.6 A Junction temperature range TJ -65 to +125 °C Storage temperature range TSTG -65 to +125 °C 1 Version: H2001