Datasheet BAS40 (Taiwan Semiconductor) - 3

BAS40 / -04 / -05 / -06 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 1 Power Derating Curve Fig.2 Maximum Non-Repetitive Peak Forward Surge Current Per Leg 600 200 ) 8.3 ms single half sine wave t (mA) rren tion (mW ipa ss Di 100 300 rd Surge Cu Forwa , Power D P Peak 0 0 0 25 50 75 100 125 1 10 100 TA - Ambient Temperature (oC) Numbers of Cycles at 60 Hz Fig.3 Typical Forward Characteristics Fig.4 Typical Reverse Characteristics 1 10000 T =125 °C A) A n t ( 1000 t (A) 0.1 T =70 °C A rren se Curren 100 ard Cu ver 0.01 us Re T =25 °C A 10 us Forw T = -40 °C A T = 0 °C T =0 °C A A 0.001 T = 25 °C A T =70 °C 1 A T = -40 °C A - Instantaneo Instantaneo T = 125 °C A I R 0.0001 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 V VR - Reverse Voltage (V) F, Instantaneous Forward Voltage (V) 3 Version: H2001