Datasheet MJL1302A (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | Bipolar Power Transistor, PNP, 15 A, 260 V, 200 Watt |
| Pages / Page | 6 / 1 — DATA SHEET. www.onsemi.com. 15 AMPERES. COMPLEMENTARY. SILICON POWER. … |
| File Format / Size | PDF / 184 Kb |
| Document Language | English |
DATA SHEET. www.onsemi.com. 15 AMPERES. COMPLEMENTARY. SILICON POWER. TRANSISTORS. 260 VOLTS. 200 WATTS. Features. PNP. NPN. Benefits
Model Line for this Datasheet
Text Version of Document
link to page 1
DATA SHEET www.onsemi.com
Complementary Bipolar
15 AMPERES
Power Transistors
COMPLEMENTARY SILICON POWER
MJL3281A (NPN)
TRANSISTORS
MJL1302A (PNP)
260 VOLTS 200 WATTS Features
Exceptional Safe Operating Area
PNP NPN
NPN/PNP Gain Matching within 10% from 50 mA to 5 A COLLECTOR 2, 4 COLLECTOR 2, 4 Excellent Gain Linearity High BVCEO 1 1 High Frequency BASE BASE These Devices are Pb−Free and are RoHS Compliant*
Benefits
EMITTER 3 EMITTER 3 Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations
MARKING DIAGRAM
Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwidth MJLxxxxA
Applications
AYYWWG 1 2 High−End Consumer Audio Products 3 Home Amplifiers
TO−264
1 3
CASE 340G
Home Receivers BASE EMITTER
STYLE 2
Professional Audio Amplifiers 2 COLLECTOR Theater and Stadium Sound Systems xxxx = 3281 or 1302 Public Address Systems (PAs) A = Location Code YY = Year WW = Work Week
MAXIMUM RATINGS
(TJ = 25C unless otherwise noted) G = Pb−Free Package
Rating Symbol Value Unit
Collector−Emitter Voltage V
ORDERING INFORMATION
CEO 260 Vdc Collector−Base Voltage VCBO 260 Vdc
Device Package Shipping
Emitter−Base Voltage VEBO 5.0 Vdc MJL3281AG TO−264 25 Units/Rail (Pb−Free) Collector−Emitter Voltage − 1.5 V VCEX 260 Vdc Collector Current − Continuous I MJL1302AG TO−264 25 Units/Rail C 15 Adc (Pb−Free) Collector Current − Peak (Note 1) ICM 25 Adc *For additional information on our Pb−Free strategy Base Current − Continuous IB 1.5 Adc and soldering details, please download the
onsemi
Total Power Dissipation @ T Soldering and Mounting Techniques Reference C = 25C PD 200 Watts Derate Above 25 Manual, SOLDERRM/D. C 1.43 W/C Operating and Storage Junction Tempera- TJ, Tstg − 65 to C ture Range +150
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RJC 0.625 C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2024 − Rev. 12 MJL3281A/D
DATA SHEET www.onsemi.com
Complementary Bipolar
15 AMPERES
Power Transistors
COMPLEMENTARY SILICON POWER
MJL3281A (NPN)
TRANSISTORS
MJL1302A (PNP)
260 VOLTS 200 WATTS Features
Exceptional Safe Operating Area
PNP NPN
NPN/PNP Gain Matching within 10% from 50 mA to 5 A COLLECTOR 2, 4 COLLECTOR 2, 4 Excellent Gain Linearity High BVCEO 1 1 High Frequency BASE BASE These Devices are Pb−Free and are RoHS Compliant*
Benefits
EMITTER 3 EMITTER 3 Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations
MARKING DIAGRAM
Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwidth MJLxxxxA
Applications
AYYWWG 1 2 High−End Consumer Audio Products 3 Home Amplifiers
TO−264
1 3
CASE 340G
Home Receivers BASE EMITTER
STYLE 2
Professional Audio Amplifiers 2 COLLECTOR Theater and Stadium Sound Systems xxxx = 3281 or 1302 Public Address Systems (PAs) A = Location Code YY = Year WW = Work Week
MAXIMUM RATINGS
(TJ = 25C unless otherwise noted) G = Pb−Free Package
Rating Symbol Value Unit
Collector−Emitter Voltage V
ORDERING INFORMATION
CEO 260 Vdc Collector−Base Voltage VCBO 260 Vdc
Device Package Shipping
Emitter−Base Voltage VEBO 5.0 Vdc MJL3281AG TO−264 25 Units/Rail (Pb−Free) Collector−Emitter Voltage − 1.5 V VCEX 260 Vdc Collector Current − Continuous I MJL1302AG TO−264 25 Units/Rail C 15 Adc (Pb−Free) Collector Current − Peak (Note 1) ICM 25 Adc *For additional information on our Pb−Free strategy Base Current − Continuous IB 1.5 Adc and soldering details, please download the
onsemi
Total Power Dissipation @ T Soldering and Mounting Techniques Reference C = 25C PD 200 Watts Derate Above 25 Manual, SOLDERRM/D. C 1.43 W/C Operating and Storage Junction Tempera- TJ, Tstg − 65 to C ture Range +150
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RJC 0.625 C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2024 − Rev. 12 MJL3281A/D
