Datasheet IGB110S101 (Infineon) - 5
| Manufacturer | Infineon |
| Description | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
| Pages / Page | 18 / 5 — Public. IGB110S101. 3 Thermal characteristics. … |
| Revision | 01_00 |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
Public. IGB110S101. 3 Thermal characteristics. Table 4 Thermal characteristics
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CoolGaNT MTransistor 100 V G3
IGB110S101 3 Thermal characteristics Table 4 Thermal characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Thermal resistance, junction ‑ case, top 22 26 RthJC ‑ °C/W ‑ Thermal resistance, junction ‑ case, bottom 5.6 8.1 Thermal resistance, junction ‑ ambient 1s0p RthJA ‑ 70 ‑ °C/W On 1 layer PCB, vertical in still air. Thermal resistance, junction ‑ ambient 2s2p RthJA ‑ 50 ‑ °C/W With vias on 4 layer PCB, vertical in still air. Datasheet Revision 1.1 https://www.infineon.com 5 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
CoolGaNT MTransistor 100 V G3
IGB110S101 3 Thermal characteristics Table 4 Thermal characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Thermal resistance, junction ‑ case, top 22 26 RthJC ‑ °C/W ‑ Thermal resistance, junction ‑ case, bottom 5.6 8.1 Thermal resistance, junction ‑ ambient 1s0p RthJA ‑ 70 ‑ °C/W On 1 layer PCB, vertical in still air. Thermal resistance, junction ‑ ambient 2s2p RthJA ‑ 50 ‑ °C/W With vias on 4 layer PCB, vertical in still air. Datasheet Revision 1.1 https://www.infineon.com 5 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
