Datasheet IGB110S101 (Infineon) - 7
| Manufacturer | Infineon |
| Description | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
| Pages / Page | 18 / 7 — Public. IGB110S101. Table 8 Reverse operation |
| Revision | 01_00 |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
Public. IGB110S101. Table 8 Reverse operation
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CoolGaNT MTransistor 100 V G3
IGB110S101 Table 8 Reverse operation
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Reverse continuous current IS 5.0 ‑ ‑ A TC=25 °C Pulsed current, reverse IS,pulse 92 2.6 3.4 VGS=0 V, IS,pulse=10 A, Tj=25 °C Source‑Drain reverse voltage VSD ‑ V 2.2 ‑ VGS=0 V, IS,pulse=0.5 A, Tj=25 °C R IS,pulse iS,pulse t Reverse recovery charge 7) Qrr ‑ 0 ‑ nC V =50 V, =10 A, d /d =100 A/μs 7) Defined by design. Not subject to production test. Datasheet Revision 1.1 https://www.infineon.com 7 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
Public
CoolGaNT MTransistor 100 V G3
IGB110S101 Table 8 Reverse operation
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Reverse continuous current IS 5.0 ‑ ‑ A TC=25 °C Pulsed current, reverse IS,pulse 92 2.6 3.4 VGS=0 V, IS,pulse=10 A, Tj=25 °C Source‑Drain reverse voltage VSD ‑ V 2.2 ‑ VGS=0 V, IS,pulse=0.5 A, Tj=25 °C R IS,pulse iS,pulse t Reverse recovery charge 7) Qrr ‑ 0 ‑ nC V =50 V, =10 A, d /d =100 A/μs 7) Defined by design. Not subject to production test. Datasheet Revision 1.1 https://www.infineon.com 7 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
