Preliminary Datasheet EPC2102 (Efficient Power Conversion) - 8
| Manufacturer | Efficient Power Conversion |
| Description | Enhancement-Mode GaN Power Transistor Half Bridge |
| Pages / Page | 10 / 8 — EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary … |
| File Format / Size | PDF / 1.4 Mb |
| Document Language | English |
EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary Specification Sheet. DIE MARKINGS. DIE OUTLINE
Model Line for this Datasheet
EPC2102
Text Version of Document
EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet DIE MARKINGS
Laser Marking Part Number Part # Marking Lot_Date Code Lot_Date Code Line 1 Marking Line 2 Marking Line 3 EPC2102ENGR 21XX YYYY ZZZZ
DIE OUTLINE Solder Bar View Pad 2 is Gate1 ( high side); Pad 4 is Gate2 ( low side); Pad 3 is HS Gate Return; Pads 5, 14, 15, 24, 25, 34, 35, 43, 44, 35, 53, 54, 44, 63, 64, 65, 73, 74, 75 are Ground Pads 1, 11, 12, 13, 21, 22, 23, 31, 32, 33, 41, 42, 51, 52, 61, 62, 71, 72 are VIN Pads 3, 6, 7, 8, 9, 10, 16, 17, 18, 19, 20, 26, 27, 28, 29, 30, 36, 37, 38, 39, 40, 46, 47, 48, 49, 50, 56, 57, 58, 59, 60, 66, 67, 68, 69, 70 are switch node. Side View
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 8
Laser Marking Part Number Part # Marking Lot_Date Code Lot_Date Code Line 1 Marking Line 2 Marking Line 3 EPC2102ENGR 21XX YYYY ZZZZ
DIE OUTLINE Solder Bar View Pad 2 is Gate1 ( high side); Pad 4 is Gate2 ( low side); Pad 3 is HS Gate Return; Pads 5, 14, 15, 24, 25, 34, 35, 43, 44, 35, 53, 54, 44, 63, 64, 65, 73, 74, 75 are Ground Pads 1, 11, 12, 13, 21, 22, 23, 31, 32, 33, 41, 42, 51, 52, 61, 62, 71, 72 are VIN Pads 3, 6, 7, 8, 9, 10, 16, 17, 18, 19, 20, 26, 27, 28, 29, 30, 36, 37, 38, 39, 40, 46, 47, 48, 49, 50, 56, 57, 58, 59, 60, 66, 67, 68, 69, 70 are switch node. Side View
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 8
