Datasheet AD8603, AD8607, AD8609 (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | Precision Micropower, Low Noise CMOS, Rail-to-Rail Input/Output Operational Amplifiers |
| Pages / Page | 16 / 4 — AD8603/AD8607/AD8609. Table 2. Parameter. Symbol. Conditions. Min. Typ. … |
| Revision | C |
| File Format / Size | PDF / 453 Kb |
| Document Language | English |
AD8603/AD8607/AD8609. Table 2. Parameter. Symbol. Conditions. Min. Typ. Max. Unit
Model Line for this Datasheet
Text Version of Document
AD8603/AD8607/AD8609
VS = 1.8 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS VS = 3.3 V @ VCM = 0.5 V and 2.8 V 12 50 μV −0.3 V < VCM < +1.8 V 40 300 μV −40°C < TA < +85°C, −0.3 V < VCM < +1.8 V 500 μV −40°C < TA < +125°C, −0.3 V < VCM < +1.7 V 700 μV Offset Voltage Drift ∆VOS/∆T −40°C < TA < +125°C 1 4.5 μV/°C Input Bias Current IB 0.2 1 pA −40°C < TA < +85°C 50 pA −40°C < TA < +125°C 500 pA Input Offset Current IOS 0.1 0.5 pA −40°C < TA < +85°C 50 pA −40°C < TA < +125°C 250 pA Input Voltage Range IVR −0.3 +1.8 V Common-Mode Rejection Ratio CMRR 0 V < VCM < 1.8 V 80 98 dB −40°C < TA < +85°C 70 dB Large Signal Voltage Gain AVO RL = 10 kΩ, 0.5 V < VO < 4.5 V AD8603 150 3000 V/mV AD8607/AD8609 100 2000 V/mV Input Capacitance CDIFF 2.1 pF CCM 3.8 pF OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1 mA 1.65 1.72 V −40°C to +125°C 1.6 V Output Voltage Low VOL IL = 1 mA 38 60 mV −40°C to +125°C 80 mV Short-Circuit Current ISC ±10 mA Closed-Loop Output Impedance ZOUT f = 10 kHz, AV = 1 36 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR 1.8 V < VS < 5 V 80 100 dB Supply Current per Amplifier ISY VO = 0 V 40 50 μA −40°C < TA < +85°C 60 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.1 V/μs Settling Time 0.1% tS G = ±1, 1 V step 9.2 μs Gain Bandwidth Product GBP RL = 100 kΩ 385 kHz RL = 10 kΩ 316 kHz Phase Margin ØO RL = 10 kΩ, RL = 100 kΩ 70 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 2.3 3.5 μV Voltage Noise Density en f = 1 kHz 25 nV/√Hz f = 10 kHz 22 nV/√Hz Current Noise Density in f = 1 kHz 0.05 pA/√Hz Channel Separation CS f = 10 kHz −115 dB f = 100 kHz −110 dB Rev. C | Page 4 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS NO PHASE REVERSAL INPUT OVERVOLTAGE PROTECTION DRIVING CAPACITIVE LOADS PROXIMITY SENSORS COMPOSITE AMPLIFIERS BATTERY-POWERED APPLICATIONS PHOTODIODES OUTLINE DIMENSIONS ORDERING GUIDE
VS = 1.8 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS VS = 3.3 V @ VCM = 0.5 V and 2.8 V 12 50 μV −0.3 V < VCM < +1.8 V 40 300 μV −40°C < TA < +85°C, −0.3 V < VCM < +1.8 V 500 μV −40°C < TA < +125°C, −0.3 V < VCM < +1.7 V 700 μV Offset Voltage Drift ∆VOS/∆T −40°C < TA < +125°C 1 4.5 μV/°C Input Bias Current IB 0.2 1 pA −40°C < TA < +85°C 50 pA −40°C < TA < +125°C 500 pA Input Offset Current IOS 0.1 0.5 pA −40°C < TA < +85°C 50 pA −40°C < TA < +125°C 250 pA Input Voltage Range IVR −0.3 +1.8 V Common-Mode Rejection Ratio CMRR 0 V < VCM < 1.8 V 80 98 dB −40°C < TA < +85°C 70 dB Large Signal Voltage Gain AVO RL = 10 kΩ, 0.5 V < VO < 4.5 V AD8603 150 3000 V/mV AD8607/AD8609 100 2000 V/mV Input Capacitance CDIFF 2.1 pF CCM 3.8 pF OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1 mA 1.65 1.72 V −40°C to +125°C 1.6 V Output Voltage Low VOL IL = 1 mA 38 60 mV −40°C to +125°C 80 mV Short-Circuit Current ISC ±10 mA Closed-Loop Output Impedance ZOUT f = 10 kHz, AV = 1 36 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR 1.8 V < VS < 5 V 80 100 dB Supply Current per Amplifier ISY VO = 0 V 40 50 μA −40°C < TA < +85°C 60 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.1 V/μs Settling Time 0.1% tS G = ±1, 1 V step 9.2 μs Gain Bandwidth Product GBP RL = 100 kΩ 385 kHz RL = 10 kΩ 316 kHz Phase Margin ØO RL = 10 kΩ, RL = 100 kΩ 70 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p 0.1 Hz to 10 Hz 2.3 3.5 μV Voltage Noise Density en f = 1 kHz 25 nV/√Hz f = 10 kHz 22 nV/√Hz Current Noise Density in f = 1 kHz 0.05 pA/√Hz Channel Separation CS f = 10 kHz −115 dB f = 100 kHz −110 dB Rev. C | Page 4 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS NO PHASE REVERSAL INPUT OVERVOLTAGE PROTECTION DRIVING CAPACITIVE LOADS PROXIMITY SENSORS COMPOSITE AMPLIFIERS BATTERY-POWERED APPLICATIONS PHOTODIODES OUTLINE DIMENSIONS ORDERING GUIDE
