Datasheets Fairchild - 2

Manufacturer: "Fairchild"
Search results: 2,217 Output: 21-40

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  1. Hex Schmitt Trigger The MM74C14 Hex Schmitt Trigger is a monolithic comple- mentary MOS (CMOS) integrated circuit constructed with N- and P-channel enhancement transistors. The positive and negative going threshold voltages V T+ and V T− , ...
  2. P-Channel, POWERTRENCH, Logic Level MOSFET This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications.
  1. PNP Epitaxial Silicon Transistor
  2. PNP Epitaxial Silicon Transistor
  3. PNP Epitaxial Silicon Transistor
  4. PNP Epitaxial Silicon Transistor
  5. P-Channel PowerTrench MOSFET, 30V, -13A, 9mΩ This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. ...
  6. N-Channel Logic Level PowerTrench MOSFET 30V, 2.7A, 46mΩ This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching ...
  7. 35V P-Channel PowerTrench MOSFET
  8. Datasheet Fairchild FDN337N
    N-Channel Logic Level Enhancement Mode Field Effect Transistor
  9. Datasheet Fairchild FDV303N
    Digital FET, N-Channel
  10. Datasheet Fairchild FDN302P
    P-Channel 2.5V Specified PowerTrench MOSFET
  11. Low Frequency Power Amplifier. NPN Epitaxial Silicon Transistor TO-220F Complement to KSB1366
  12. Low Frequency Power Amplifier. PNP Epitaxial Silicon Transistor TO-220F
  13. Datasheet Fairchild FDV301N
    Digital FET, N-Channel Specifications: Continuous Drain Current Id: 220 mA Current Id Max: 220 mA Current Temperature: 25 C Drain Source Voltage Vds: 25 V ESD HBM: 6 kV External Depth: 2.5 mm External Length / Height: 1.12 mm External Width: 3.05 ...
  14. 3-Terminal 0.1 A Positive Adjustable Regulator
  15. Photodarlington Optical Interrupter Switch The H21B1, H21B2 and H21B3 consist of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The packaging system is designed to optimize the mechanical ...
  16. 30V N-Channel PowerTrench MOSFET
  17. Plastic Silicon Phototransistor
  18. PNP Epitaxial Silicon Transistor TO-126

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