Datasheets - MOSFET Single Transistors
Subsection: "MOSFET Single Transistors"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 8,154 Output: 1-20
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UHF power LDMOS transistor A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog ...- UHF power LDMOS transistor A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter applications which operates at 180 W DVB-T average power. The excellent ruggedness of this device makes it ideal for digital and analog ...
UHF power LDMOS transistor A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device ...- UHF power LDMOS transistor A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device ...
UHF power LDMOS transistor A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device ...- UHF power LDMOS transistor A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device ...
- 30V P-Channel MOSFET The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
- P-Channel 1.8V Specified PowerTrench MOSFET This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
P-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.- P-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- P-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state resistance (R DS(ON) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- MOSFET Single Transistors Vishay IRFP22N60K IRFP22N60KPBF
Transistors, Transistor Arrays & Modules Vishay IRFP22N60K
Power MOSFET in TO-247AC package Features Low gate charge Qg results in simple drive requirement Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche voltage and current - MOSFET Single Transistors Vishay IRFP22N60K
Transistors, Transistor Arrays & Modules Vishay IRFP22N60KPower MOSFET in TO-247AC package Features Low gate charge Qg results in simple drive requirement Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche voltage and current - MOSFET Single Transistors ON Semiconductor MTP33N10E
Transistors, Transistor Arrays & Modules ON Semiconductor MTP33N10EPower MOSFET 33 Amps, 100 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ... - MOSFET Single Transistors ON Semiconductor MTP20N20E
Transistors, Transistor Arrays & Modules ON Semiconductor MTP20N20EPower MOSFET 20 Amps, 200 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ... - N- P-Channel Enhancement Mode Field Effect Transistor
- MOSFET Single Transistors ON Semiconductor CPH3362
Transistors, Transistor Arrays & Modules ON Semiconductor CPH3362Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel - MOSFET Single Transistors ON Semiconductor CPH3362 CPH3362-TL-W
Transistors, Transistor Arrays & Modules ON Semiconductor CPH3362Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel - N-Channel MOSFET
- N-Channel MOSFET
