Datasheets - Transistors, Transistor Arrays & Modules
Subsection: "Transistors, Transistor Arrays & Modules"
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- MOSFET Single Transistors ON Semiconductor CPH3362
Transistors, Transistor Arrays & Modules ON Semiconductor CPH3362Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel - MOSFET Single Transistors ON Semiconductor CPH3362 CPH3362-TL-W
Transistors, Transistor Arrays & Modules ON Semiconductor CPH3362Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel
- 400V N-Channel HEXFET Transistors The HEXFET technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design ...
- MOSFET Single Transistors STMicroelectronics STF19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STF19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - MOSFET Single Transistors STMicroelectronics STD19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STD19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - MOSFET Single Transistors STMicroelectronics STB19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STB19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - MOSFET Single Transistors STMicroelectronics STP19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STP19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - MOSFET Single Transistors Vishay IRFZ24 IRFZ24PbF-BE3
Transistors, Transistor Arrays & Modules Vishay IRFZ24
Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. - Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
- MOSFET Single Transistors Vishay IRFZ24 IRFZ24PbF
Transistors, Transistor Arrays & Modules Vishay IRFZ24Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. - MOSFET Single Transistors Vishay SiHFU9310 SiHFU9310-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFU9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- MOSFET Single Transistors Vishay SiHFR9310 SiHFR9310-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - MOSFET Single Transistors Vishay SiHFR9310 SiHFR9310TRL-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - MOSFET Single Transistors Vishay SiHFR9310 SiHFR9310TR-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - MOSFET Single Transistors Vishay SiHFR9310 SiHFR9310TRR-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- MOSFET Single Transistors Vishay IRFU9310 IRFU9310PbF
Transistors, Transistor Arrays & Modules Vishay IRFU9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- MOSFET Single Transistors Vishay IRFR9310 IRFR9310TRLPbF
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
