Complementary Enhancement Mode Field Effect Transistor The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
SiC Modules, Half Bridge 2-PACK 1200 V, 6 mohm SiC MOSFET, F2 Package The NXH006P120MNF2 is a half-bridge or 2-PACK SiC Module with 2 6mohm 1200V SiC MOSFET switches and a thermistor in an F2 package. The SiC MOSFET switches use M1 technology and ...
SiC Module, 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC MOSFET The NXH010P120MNF1 is a SiC MOSFET module containing a 10 mohm SiC MOSFET half bridge and an NTC thermistor in am F1 module.
SiC Module, 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC MOSFET The NXH010P120MNF1 is a SiC MOSFET module containing a 10 mohm SiC MOSFET half bridge and an NTC thermistor in am F1 module.
Dual N-Channel Enhancement Mode Power MOSFET Advanced Power MOSFETs utilized advanced processing techniques to achieve low on-resistance, extremely efficient and cost-effective device best suited for lithium-ion Battery charging and discharging ...
TC6321 is derived from the TC6320, with its high voltage, low threshold N-channel and P-channel MOSFETs, but offered in a thermally enhanced 5mm x 6mm DFN, with better thermal transfer and higher operating range, to 175 C
TC6321 is derived from the TC6320, with its high voltage, low threshold N-channel and P-channel MOSFETs, but offered in a thermally enhanced 5mm x 6mm DFN, with better thermal transfer and higher operating range, to 175 C