Datasheets - MOSFET Arrays & Modules

Subsection: "MOSFET Arrays & Modules"
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  1. Complementary Enhancement Mode Field Effect Transistor The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
  2. SiC Modules, Half Bridge 2-PACK 1200 V, 6 mohm SiC MOSFET, F2 Package The NXH006P120MNF2 is a half-bridge or 2-PACK SiC Module with 2 6mohm 1200V SiC MOSFET switches and a thermistor in an F2 package. The SiC MOSFET switches use M1 technology and ...
  1. SiC Module, 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC MOSFET The NXH010P120MNF1 is a SiC MOSFET module containing a 10 mohm SiC MOSFET half bridge and an NTC thermistor in am F1 module.
  2. SiC Module, 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC MOSFET The NXH010P120MNF1 is a SiC MOSFET module containing a 10 mohm SiC MOSFET half bridge and an NTC thermistor in am F1 module.
  3. Dual N-Channel Enhancement Mode Power MOSFET Advanced Power MOSFETs utilized advanced processing techniques to achieve low on-resistance, extremely efficient and cost-effective device best suited for lithium-ion Battery charging and discharging ...
  4. TC8220 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package
  5. TC8220 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package
  6. TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package
  7. TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package
  8. TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package
  9. TC7920 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package
  10. TC7920 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package
  11. TC6321 is derived from the TC6320, with its high voltage, low threshold N-channel and P-channel MOSFETs, but offered in a thermally enhanced 5mm x 6mm DFN, with better thermal transfer and higher operating range, to 175 C
  12. TC6321 is derived from the TC6320, with its high voltage, low threshold N-channel and P-channel MOSFETs, but offered in a thermally enhanced 5mm x 6mm DFN, with better thermal transfer and higher operating range, to 175 C
  13. TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages
  14. TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages
  15. TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages
  16. TC6215 consists of high voltage, low threshold N-channel and P-channel MOSFETs in an 8-Lead SOIC (TG) package
  17. TC6215 consists of high voltage, low threshold N-channel and P-channel MOSFETs in an 8-Lead SOIC (TG) package
  18. TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package