Datasheets - IGBT Single Transistors International Rectifier - 9
Subsection: "IGBT Single Transistors"
Manufacturer: "International Rectifier"
Manufacturers
APT Diodes Dynex Fairchild Fuji Electric Genesic Semiconductor Infineon International Rectifier Intersil IXYS NTE Electronics ON Semiconductor Powerex Sanyo Semikron STMicroelectronics Toshiba VishaySeries
IRG4PH50UDSearch results: 219 Output: 161-180
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Part Number: IRG4PC20UPBF Manufacturer: International Rectifier Description: IGBT, TO-247 Download Data Sheet Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 250 V Max Power Dissipation: 60 W Collector-to-Emitter Breakdown Voltage: 600 V ...
Part Number: IRG4IBC30WPBF Manufacturer: International Rectifier Description: IGBT, 600V, 17A, TO-220FP Download Data Sheet Specifications: Transistor Type: IGBT DC Collector Current: 17 A Max Voltage Vce Sat: 2.1 V Max Power Dissipation: 45 W ...
- Part Number: IRG4IBC30KDPBF Manufacturer: International Rectifier Description: IGBT, 600V, 17A, TO-220FP Download Data Sheet Specifications: Transistor Type: IGBT DC Collector Current: 17 A Max Voltage Vce Sat: 2.7 V Max Power Dissipation: 45 W ...
- Part Number: IRG4IBC30FD Manufacturer: International Rectifier Description: IGBT, TO-220 FULLPAK Download Data Sheet Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 1.59 V Max Power Dissipation: 45 W Collector-to-Emitter Breakdown ...
Part Number: IRG4BC40KPBF Manufacturer: International Rectifier Description: IGBT, 600V, 42A, TO-220 Download Data Sheet Specifications: Transistor Type: IGBT DC Collector Current: 42 A Max Voltage Vce Sat: 2.1 V Max Power Dissipation: 160 W ...
Part Number: IRG4BC30S-SPBF Manufacturer: International Rectifier Description: IGBT, D2-PAK Download Data Sheet Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 1.6 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case Style: ...- Part Number: IRGS6B60KPBF Manufacturer: International Rectifier Description: SINGLE IGBT, 600 V, 13 A Download Data Sheet Docket: PD - 95644A INSULATED GATE BIPOLAR TRANSISTOR Features · Low VCE (on) Non Punch Through IGBT Technology. · 10µs Short ...
- Part Number: IRGS6B60KDPBF Manufacturer: International Rectifier Description: IGBT, 600V, 13A, D2-PAK Download Data Sheet Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 2 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case ...
- Part Number: IRGS30B60KPBF Manufacturer: International Rectifier Description: IGBT, D2-PAK Download Data Sheet Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 2.95 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case Style: ...
Part Number: IRGR3B60KD2PBF Manufacturer: International Rectifier Description: IGBT, 600V, 7.8A, D-PAK Download Data Sheet Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 2.4 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor ...- Part Number: IRGB4B60KPBF Manufacturer: International Rectifier Description: IGBT, 600V, 12A, TO-220 Download Data Sheet Specifications: Transistor Type: IGBT DC Collector Current: 12 A Max Voltage Vce Sat: 2.5 V Max Power Dissipation: 63 W ...
- Part Number: IRG4RC10UPBF Manufacturer: International Rectifier Description: IGBT, 600V, 8.5A, D-PAK Download Data Sheet Simulation Model Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 2.6 V Collector-to-Emitter Breakdown Voltage: 600 V ...
- Part Number: IRG4RC10UDPBF Manufacturer: International Rectifier Description: IGBT, D-PAK Download Data Sheet Simulation Model Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 2.6 V Max Power Dissipation: 38 W Collector-to-Emitter ...
Part Number: IRG4PSC71UPBF Manufacturer: International Rectifier Description: IGBT, 600V, 85A, TO-274AA Download Data Sheet Simulation Model Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 2 V Max Power Dissipation: 350 W ...
Part Number: IRG4PH40UD2-EP Manufacturer: International Rectifier Description: IGBT, TO-247AD Download Data Sheet Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 3.1 V Collector-to-Emitter Breakdown Voltage: 1200 V Transistor Case Style: ...- Part Number: IRGS8B60KPBF Manufacturer: International Rectifier Description: SINGLE IGBT, 600 V, 28 A Download Data Sheet Docket: PD - 95645B INSULATED GATE BIPOLAR TRANSISTOR Features · · · · · Low VCE (on) Non Punch Through IGBT Technology. 10µs ...
- Part Number: IRG4PC40W Manufacturer: International Rectifier Description: IGBT, TO-247 Download Data Sheet Docket: PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features · Designed expressly for Switch-Mode Power Supply and PFC (power ...
- Part Number: IRG4PF50WD Manufacturer: International Rectifier Description: IGBT, TO-247 Download Data Sheet Docket: PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features · Optimized for use in Welding ...
- Part Number: IRG4PH40U Manufacturer: International Rectifier Description: IGBT, TO-247 Download Data Sheet Docket: PD - 9.1612B PRELIMINARY IRG4PH40U Ultra Fast Speed IGBT C Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 3.5 V Max Power ...
- Part Number: IRG4IBC30W Manufacturer: International Rectifier Description: IGBT, TO-220 FULLPAK Download Data Sheet Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 2.1 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case ...
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